Program

Opto

Power

RF

Accepted papers

First Author Affiliations Title of oral presentation
S. Leone Fraunhofer IAF AlScN high electron mobility transistor structures grown by metal-organic chemical vapor deposition
C. Koller KAI GmbH Semi-insulating carbon-doped GaN: extraction of carbon acceptor and donor concentrations
D. Ritter Technion – Israel Institute of Technology Haifa, Israel Insight by TCAD into buffer trap induced current saturation and current collapse in GaN HFETs for compact modelling
K. Park

Korea  Advanced

Nano  Fab  Center

High sensitive AlGaN/GaN HEMT sensor for H2 detection at room temperature
P. Loretz Evatec  AG,  9477  Trübbac Liquid target RF enhanced GaN sputtering
T. Tschirky Evatec AG, 9477 Trübbach Reactive Sputtering of GaN on Al2O3
T. F. K. Weatherley

École Polytechnique Fédérale

de  Lausanne  (EPFL)

Direct observation of point defect density reduction

in InGaN/GaN quantum wells using an underlayer

Y.Chen

École Polytechnique Fédérale

de  Lausanne  (EPFL)

Critical impact of GaN growth temperature on the quantum efficiency of InGaN/GaN quantum wells
L. Lymperakis

Max-Planck-Institut  für

Eisenforschung

Ab-initio investigations of screw type dislocations and the formation of nanopipes in GaN
B. De Jaeger IMEC Optimization of E-mode HEMTs with Regrown p-GaN Gate by Impurity Reduction at the Regrowth Interface
M. Mikulla Fraunhofer IAF Sub-100 nm III-N HEMTs – Operation at the higher mm-Wave Frequencies
J. Jridi Institut  Pascal Selective growth of compositional controlled (In,Ga)N nanowires by HVPE
R. Hentschel Namlab GmbH Influence of the edge termination on the leakage current in vertical GaN devices
P. Sana Otto-von-Guericke-University  Magdeburg Ge-Doped AlInN/GaN Superlattices
A.Calzolaro NaMLab GmbH Improving stability of gold-free Ta/Al-based ohmic contacts annealed at low temperature for AlGaN/GaN heterostructures
S. J. Bader Cornell University Will wide-bandgap CMOS use Gallium Nitride?
S. Tomiya Sony Corporation The effect of InGaN underlayers on carrier recombination of InGaN quantum wells
S. Reza

Sandia  National

Laboratories

A Novel Hexagonal Compound Device Topology Concept for Improved Thermal Performance
D. Meyer AIXTRON

Understanding the mechanism of Ga incorporation

in InAlN layers grown by MOCVD

P. Šichman Slovak  Academy  of  Science Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure
J. Wang IMEC Surface-potential Based Compact Modeling of p-GaN Gate HEMTs
J.-T. Chen SweGaN AB 150mm buffer-free GaN-on-SiC HEMT epitaxial wafers for high-performance microwave and power devices
D. Alvarez RASIRC (USA) Low Temperature Crystalline Aluminum Nitride Deposition Enabled by Hydrazine
X. Li IMEC Integration of GaN Analog Building Blocks on p-GaN Wafers for GaN ICs
H.-S. Kim Hongik  University,  Seoul Optimization of PECVD SiNx Passivation for Thin Barrier AlGaN/GaN HFET
S. Dutta Gupta Indian Institute of Science, Bangalore Physical insights into Dynamic RON in AlGaN/GaN HEMTs with carbon-doped buffer
A. Di Vito

University of

Rome Tor Vergata

Beyond uniform random alloy approximation in InGaN based LEDs simulations
R. R. Chaudhuri Indian Institute of Science, Bangalore Experimental Observations of Hot Electron Interaction with Traps in C-doped GaN buffer in AlGaN/GaN HEMTs: Investigating the Role of Lateral Electric Field
B. Bakeroot IMEC and Ghent University Using RESURF Technique for Edge Termination of Semi-Vertical GaN Devices
F. Piva University of Padova Analysis of the role of defects in a mid-term degradation of AlGaN-based UV-B LEDs
K. Mukherjee University of Padova Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors
A. Taube Institute of Electron Technology, Warsaw Fabrication and characterization of high power AlGaN/GaN-on-Si MOSHEMTs with ALD-deposited Al2O3 gate dielectric
S. Boughaleb University  of  Grenoble-Alpes,  CEA,  LETI Selective Area Growth of AlGaN nanopyramids by MOVPE
P. Da KLA Corporation (USA) Wafer-scale defect inspection of GaN epi and substrate by Candela
B. Samuel University  of  Grenoble-Alpes,  CEA,  LETI Indium inhomogeneity investigations in a red emitting full InGaN structure by coupled characterizations
V. Matias iBeam, Sandia National Labs Epitaxial GaN devices fabricated directly on metal foils
H. Banayeem Chemnitz University of Technology

Far-field dynamics of broad ridge blue

(Al,In)GaN laser diodes

K. Strempel Technische Universität Braunschweig Vertical field-effect transistors based on 3D GaN fin structures
M. Fouchier Attolight, AIXTRON Dopant and Defect Characterization by Cathodoluminescence in Undoped, Si-doped and C-doped GaN
V. Garbe TU  Bergakademie  Freiberg Au-free Ohmic Contact Formation and their Influence on the 2DEG in AlGaN/GaN-HEMTs
J. A. Gonzalez Montoya Politecnico di Torino NEGF modeling of trap-assisted tunneling in GaN-based LEDs

GaN Marathon is by nature a workshop, so the number of available seats will be limited (first come, first serve). The last editions of the GaN Marathon were fully booked: we strongly recommend to register in advance and to start soon with hotel reservation.

Location

S. Marco, 2847, 30124 Venezia VE

Dates

April 27-29, 2020

Email

gan@dei.unipd.it