Program

Opto

Power

RF

Confirmed Plenary speakers

Hiroshi Amano, Nagoya University
Debdeep Jena, Cornell University
Srabanti Chowdhury, Stanford University

GaN Marathon is by nature a workshop, so the number of available seats will be limited (first come, first serve). The last editions of the GaN Marathon were fully booked: we strongly recommend to register in advance and to start soon with hotel reservation.

New III-N devices on parade

 

Hiroshi Amano joined Prof. late Isamu Akasaki’s group, Nagoya University in 1982 as an undergraduate student. After graduation, he has continued research on the growth, characterization and device applications of III –N semiconductors. Amano has led his own world-class research group since 1992 at Meijo University, and he has moved to Nagoya University where continues to lead the world in the creation of high-performance DUV LEDs, LDs, high-power/high-frequency devices. He shared the Nobel Prize in Physics 2014 with Prof. late Isamu Akasaki and Prof. Shuji Nakamura “For the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources”.

New III-N devices on parade

 

Hiroshi Amano joined Prof. late Isamu Akasaki’s group, Nagoya University in 1982 as an undergraduate student. After graduation, he has continued research on the growth, characterization and device applications of III –N semiconductors. Amano has led his own world-class research group since 1992 at Meijo University, and he has moved to Nagoya University where continues to lead the world in the creation of high-performance DUV LEDs, LDs, high-power/high-frequency devices. He shared the Nobel Prize in Physics 2014 with Prof. late Isamu Akasaki and Prof. Shuji Nakamura “For the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources”.

A Whole New World For Gallium Nitride Electronics

 

Debdeep Jena (https://djena.engineering.cornell.edu) is the David E. Burr Professor of Engineering at Cornell University.  His research is driven by the goal to enable orders of magnitude increase in the energy efficiency and speed for computation, memory, communications, lighting, and electrical energy management ranging from the chip to the grid.  His teaching and research are in the quantum physics of semiconductors and electronic and photonic devices based on quantized semiconductor structures (e.g. Nitrides, Oxides, 2D Materials), and their heterostructures with superconductors, ferroelectrics and magnets, with device applications in energy-efficient transistors, light-emitting diodes and RF and power electronics and quantum computation and communications.  The research from his group has been published in more than 300 journal papers including in Science, Nature, Physical Review Letters, Applied Physics Letters and Electron Device Letters. Several patents have been granted for the group’s research work.  He is a fellow of the American Physical Society and is the winner of teaching awards and research awards such as the ISCS young scientist award in 2012, MBE young scientist award in 2014, and awards from the industry such as the IBM faculty award in 2012, and most recently the Intel Outstanding Research award in 2020.

Unleashing the full potential of GaN with avalanche and integrated thermal management

 

Prof. Srabanti Chowdhury of Electrical Engineering is the Willard and Inez Kerr Bell Faculty Scholar of School of Engineering at Stanford University. Her research focuses on wideband gap (WBG) and ultra-wide bandgap (UWBG) materials and device engineering for energy efficient and compact system architecture for power electronics, and RF applications. She leads the WBG-lab @ Stanford and serves as the Science Collaboration Director of the Energy Frontier Research Center (EFRC), ULTRA, supported by the US Department of Energy. She received her M.S and PhD in Electrical Engineering from University of California, Santa Barbara. She has received various early career awards, including the DARPA Young Faculty Award, NSF CAREER and AFOSR Young Investigator Program (YIP) in 2015. In 2016 she received the Young Scientist award at the International Symposium on Compound Semiconductors (ISCS). She received the Alfred P. Sloan fellowship in Physics in 2020. Currently, she is a senior fellow at the Precourt Institute of Energy at Stanford, a senior member of IEEE, and an alumna of the NAE Frontiers of Engineering.  To date, her work has produced over 6 book chapters, 95 journal papers, 120 conference presentations, and over 26 issued patents.  She serves the executive committee of IEDM and the technical program committee of several IEEE conferences including IRPS and VLSI Symposium. In various capacities she served/serves the organizing committee of Workshop on Wide Bandgap Power Devices and Applications, Topical Workshop on Heterostructure Microelectronics, Compound Semiconductor Week (CSW), International Workshop on Nitrides (IWN). She serves as an editor of IEEE-Transaction of Electron Devices, and a member of the advisory editorial board of Physica Status Solidi.

Unleashing the full potential of GaN with avalanche and integrated thermal management

 

Prof. Srabanti Chowdhury of Electrical Engineering is the Willard and Inez Kerr Bell Faculty Scholar of School of Engineering at Stanford University. Her research focuses on wideband gap (WBG) and ultra-wide bandgap (UWBG) materials and device engineering for energy efficient and compact system architecture for power electronics, and RF applications. She leads the WBG-lab @ Stanford and serves as the Science Collaboration Director of the Energy Frontier Research Center (EFRC), ULTRA, supported by the US Department of Energy. She received her M.S and PhD in Electrical Engineering from University of California, Santa Barbara. She has received various early career awards, including the DARPA Young Faculty Award, NSF CAREER and AFOSR Young Investigator Program (YIP) in 2015. In 2016 she received the Young Scientist award at the International Symposium on Compound Semiconductors (ISCS). She received the Alfred P. Sloan fellowship in Physics in 2020. Currently, she is a senior fellow at the Precourt Institute of Energy at Stanford, a senior member of IEEE, and an alumna of the NAE Frontiers of Engineering.  To date, her work has produced over 6 book chapters, 95 journal papers, 120 conference presentations, and over 26 issued patents.  She serves the executive committee of IEDM and the technical program committee of several IEEE conferences including IRPS and VLSI Symposium. In various capacities she served/serves the organizing committee of Workshop on Wide Bandgap Power Devices and Applications, Topical Workshop on Heterostructure Microelectronics, Compound Semiconductor Week (CSW), International Workshop on Nitrides (IWN). She serves as an editor of IEEE-Transaction of Electron Devices, and a member of the advisory editorial board of Physica Status Solidi.

Location

S. Marco, 2847, 30124 Venezia VE

Dates

June 20-22, 2022

Email

gan@dei.unipd.it