Program
Opto
Power
RF
Invited speakers
| NAME | AFFILIATION | TITLE | |
| Martin | Albrecht | IKZ Berlin | The role of dislocations in hillock formation in the growth of AlGaN on AlN |
| Georg | Bruederl | AMS-OSRAM | Blue and green GaN-based single mode laser for projection – status and challenges |
| Jr-Tai | Chen | Swegan | Recent progress in buffer-free GaN-on-SiC HEMT epitaxial heterostructures for microwave and power devices |
| Michael | Damman | Fraunhofer-IAF | GaN HEMT reliability of RF devices: A technology comparison |
| Gerald | Deboy | Infineon | Value prosition of GaN devices in high and low power applications |
| Amélie | Dussaigne | Leti | High In content InGaN alloy by strain reduction: application to native RGB micro-display |
| Patrick | Fay | Univ. Notre Dame | Polarization Engineering for High-Efficiency, High-Linearity mm-Wave Transistors |
| Karen | Geens | IMEC | Recent Advancements in Vertical GaN Device Development on Engineered Substrates |
| Romain | Gwoziecki | CEA | Recent advance in GAN Power devices development at CEA-LETI |
| Åsa | Haglund | Chalmers University | Electrochemical etching – a key enabler for thin-film VCSELs and LEDs? |
| Michael | Heuken | AIXTRON | Epitaxial growth of vertical GaN device layer stacks on 200 mm engineered substrates |
| Ferdinando | Iucolano | ST |
Emerging GaN-on Si Technologies: RF and Power Devices |
| Jose | Jimenez | Qorvo | Optmizing a linear GaN technology for sub 6GHz applications. |
| Ingmar | Kallfass | Univ. Stuttgart and IMS CHIPS | TBD |
| Christian | Koller | Infineon |
Understanding Charge Transport and Trapping/Detrapping in GaN Power Devices |
| Alex | Lidow | EPC | GaN Integrated Circuits for More Efficient Motor Drives |
| Giorgia | Longobardi | Cambridge GaN Devices | CGD monolithically integrated approach for power devices: The third way |
| Elison | Matioli | EPFL | New technologies for efficient and integrated GaN power devices |
| Farid | Medjdoub | IEMN-CNRS | High Power-Added-Efficiency millimeter-wave GaN HEMTs |
| Matteo | Meneghini | UniPD |
Defects and trapping in GaN power devices |
| Peter | Moens | ONSemiconductor | Steep Subtreshold Transistors : A Gem from the AlGaN/GaN Power Device World |
| Herbert | Pairitsch | Infineon | Future ‘greener’ applications enabled by UltimateGaN |
|
Mayank |
Srivastava |
Indian Institute of Science |
Reliable Enhancement-Mode AlGaN/GaN HEMTs by p-type AlTiO Based Gate Stack Engineering |
| Luca | Sulmoni | TU Berlin | Realizing wide bandgap tunnel junctions for fully transparent MOVPE-grown UV LEDs |
| Thomas | Weatherley | EPFL | Point defects and carrier diffusion length in InGaN/GaN quantum wells |
| Joachim | Wuerfl | FBH | Novel AlN-based power and mm-wave transistors: Technological concepts and performance |
| Hao | Yu | IMEC |
Low-Field Transport Modeling to Enable Prediction and Optimization of GaN Heterostructure Sheet Resistance |
| Enrico | Zanoni | University of Padova | Degradation and reliability of GaN RF transistors |
GaN Marathon is by nature a workshop, so the number of available seats will be limited (first come, first serve). The last editions of the GaN Marathon were fully booked: we strongly recommend to register in advance and to start soon with hotel reservation.
Location
S. Marco, 2847, 30124 Venezia VE
Dates
June 20-22, 2022
gan@dei.unipd.it