GaN Marathon

These Are

Our Keynote Speakers...

Hiroshi Amano

Nagoya University

Emerging Functionalities in Nitride Semiconductors Enabled by Ferroelectric Materials

Professor Hiroshi Amano received Doctor of Engineering from Nagoya University. Currently he is a Director, Center for Integrated Research of Future Electronics, and a Professor, Institute of Materials and Systems for Sustainability, Nagoya University.

He shared the 2014 Nobel Prize in Physics with Prof. Isamu Akasaki and Prof. Shuji Nakamura “for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources”.

He is currently developing technologies for the fabrication of high-efficiency power semiconductor development and new energy-saving devices at Nagoya University.

Biography Collapse
BIOGRAPHY

Professor Hiroshi Amano received Doctor of Engineering from Nagoya University. Currently he is a Director, Center for Integrated Research of Future Electronics, and a Professor, Institute of Materials and Systems for Sustainability, Nagoya University.

He shared the 2014 Nobel Prize in Physics with Prof. Isamu Akasaki and Prof. Shuji Nakamura “for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources”.

He is currently developing technologies for the fabrication of high-efficiency power semiconductor development and new energy-saving devices at Nagoya University.

Umesh Mishra

University of California - Santa Barbara

The many faces of GaN

Professor Mishra joined ECE Department at the University of California, Santa Barbara in 1990 from the Department of Electrical and Computer Engineering at North Carolina State University. A recognized leader in the area of high-speed field effect transistors, Dr. Mishra has made major contributions at every laboratory and academic institution for which he has worked, including: Hughes Research Laboratories in Malibu, California; the University of Michigan at Ann Arbor; and General Electric, Syracuse, New York. His current research areas attempt to develop an understanding of novel materials and extend them into applications. He is the Director of the AFOSR PRET Center for Non-Stoichiometric Semiconductors and of the ONR MURI Center (IMPACT), which relates to the application of SiC and GaN based transistors for power amplification. (Source)

Biography Collapse
BIOGRAPHY

Professor Mishra joined ECE Department at the University of California, Santa Barbara in 1990 from the Department of Electrical and Computer Engineering at North Carolina State University. A recognized leader in the area of high-speed field effect transistors, Dr. Mishra has made major contributions at every laboratory and academic institution for which he has worked, including: Hughes Research Laboratories in Malibu, California; the University of Michigan at Ann Arbor; and General Electric, Syracuse, New York. His current research areas attempt to develop an understanding of novel materials and extend them into applications. He is the Director of the AFOSR PRET Center for Non-Stoichiometric Semiconductors and of the ONR MURI Center (IMPACT), which relates to the application of SiC and GaN based transistors for power amplification. (Source)

Hiroshi Amano

Nagoya University

Emerging Functionalities in Nitride Semiconductors Enabled by Ferroelectric Materials

BIOGRAPHY

Professor Hiroshi Amano received Doctor of Engineering from Nagoya University. Currently he is a Director, Center for Integrated Research of Future Electronics, and a Professor, Institute of Materials and Systems for Sustainability, Nagoya University.

He shared the 2014 Nobel Prize in Physics with Prof. Isamu Akasaki and Prof. Shuji Nakamura “for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources”.

He is currently developing technologies for the fabrication of high-efficiency power semiconductor development and new energy-saving devices at Nagoya University.

Umesh Mishra

University of California - Santa Barbara

Revisiting the physics of InGaN LEDs: Myths and facts

BIOGRAPHY

Professor Mishra joined ECE Department at the University of California, Santa Barbara in 1990 from the Department of Electrical and Computer Engineering at North Carolina State University. A recognized leader in the area of high-speed field effect transistors, Dr. Mishra has made major contributions at every laboratory and academic institution for which he has worked, including: Hughes Research Laboratories in Malibu, California; the University of Michigan at Ann Arbor; and General Electric, Syracuse, New York. His current research areas attempt to develop an understanding of novel materials and extend them into applications. He is the Director of the AFOSR PRET Center for Non-Stoichiometric Semiconductors and of the ONR MURI Center (IMPACT), which relates to the application of SiC and GaN based transistors for power amplification. (Source)

...And Our Invited Speakers (More Coming Soon)

Shigefusa Chichibu Tohoku University
Causes and countermeasures for the operation-induced power degradation issues in 275-nm-band AlGaN-based MQW LEDs
Srabanti Chowdhury Stanford University
GaN power electronics for new applications
Nadine Collaert IMEC
RF GaN Today: Maturity, Momentum, and What Comes Next
Patrick Fay Notre Dame University
Impact Ionization in Wide- and Ultra-Wide Bandgap III-Ns: Measurements and Device Implication
Simon Fichtner Kiel University
Spontaneous Polarization and Ferroelectrictiy in III-N Semiconductors
Thomas Filz ams-OSRAM
µLED-applications in automotive, visualization and communication
Mitsuru Funato Kyoto University
Blue to red micro-LEDs
Samuel Graham University of Maryland
Designing AlGaN and AlN Devices for High Power Operation
Nicolas Grandjean Institute of Physics, School of Basic Sciences, EPFL
Non-radiative activity of dislocations
Kolja Haberland Laytec
Connected metrology - in-situ and ex-situ metrology during fabrication of GaN based layer stacks
Åsa Haglund Chalmers University of Technology
Are photonic crystal surface emitting lasers perfect lasers or lasers for perfectionists?
Tania Hemakumara Oxford Instruments
Innovative Plasma Processing Solutions for High Volume Manufacturing of GaN devices
Ferdinando Iucolano STMicroelectronics
TBD
Kazutada Ikenaga Taiyo Nippon Sanso
Enhancing Nitride Epitaxy Through Integrated MOCVD Technology
Motoaki Iwaya Mejo University
AlGaN UV-B Laser Diodes for Industrial Applications: Realization of Sharp Heterointerfaces via Low-Temperature MOVPE Growth
Debdeep Jena Cornell University
Lattice-matched AlScN/GaN HEMTs
Jose Jimenez Qorvo
TBD
Raoul Joli Beneq
Impact of Atomic Layer Deposition Surface Passivation on the Electrical Performance of p-GaN HEMT Devices
Martin Kuball Bristol University
Pathways for >3kV power devices: Opportunities in AlGaN and Gallium Oxide
Maki Kushimoto Nagoya University
Recent Progress in AlGaN-Based Deep UV Laser Diodes
Stefano Leone Fraunhofer IAF; Epitaly
Beyond Conventional MOCVD: precursor chemistry unlocks next-generation nitrides HEMTs
Elison Matioli Institute of Electrical and Micro-Engineering, EPFL
Leading edge roadmap for GaN devices
Matteo Meneghini University of Padova
Impact Ionization in GaN HEMTs: Experimental Analysis and Reliability Implications
Tetsuo Narita Toyota Central R&D Labs.,Inc.
Control of Positive and Negative Bias Instability in GaN MOSFETs Using Crystalline AlN Interfacial Layer Technology
Nicola Modolo Infineon Technologies Austria AG
From Regression Analysis in GaN HEMTs towards Voltage Proliferation and Aging Models
Tomás Palacios MIT, Boston
GaN Technologies to Enable Back-Side Power Delivery
Siddharth Rajan Ohio State University
High-Performance Ultra-Wide Bandgap AlGaN Transistors
Ulrich Schwarz TU Chemnitz
Far-field and mode prediction in photonic crystal surface emitting lasers (PCSELs)
Chris Van de Walle UCSB
Role of defects and impurities in efficiency and degradation of nitride devices
Tim Wernicke TU Berlin
TBD
Huili Grace Xing Cornell University
AlN XHEMTs – a new kid on the block
Enrico Zanoni University of Padua
Degradation of RF devices
Thorsten Zweipfennig Aixtron
Enabling GaN HEMT manufacturing on 300 mm Si substrates