GaN Marathon 2024

JUNE 10TH - 12TH 2024, VERONA, ITALY

Join GaN Marathon 2024!
Discuss with the experts the latest advancements on GaN technologies.

News:

HAVE A LOOK AT THE PROGRAM OF THE GAN MARATHON 2024

THE CALL FOR PAPER FOR PUBLICATION ON POWER ELECTRONIC DEVICES AND COMPONENTS IS OPEN

GaN Marathon 2024 will start in:

Just A Few Words

About The Event

GaN Marathon 2024 will be held in the heart of Verona, a UNESCO world heritage and set of Shakespeare’s play Romeo and Juliet. Several invited and regular speakers from Europe and overseas will discuss the latest advancement of GaN technologies in microwave, mm-wave, 5G communications, power conversion and optoelectronics.

Where

Hotel Due Torri

Piazza S.Anastasia, 4 – 37121 Verona, Italy

When

10th – 12th June 2024 Monday to Wednesday

Back-to-back talks and a dedicated poster session will favor the discussion. Coffee breaks and social lunches / dinners will ease networking.

Registrations at the GaN Marathon 2024 are now open.

15:00 CET, March 18th, 2024

3 keynote speakers - 32 invited speakers

Submitted papers will be presented in oral form, or during a dedicated poster session on the shores of Garda Lake, to ensure great visibility to your work.

HURRY UP!

Registrations are OPEN

Registration is now possible for presenting attendees only, through the dedicated link sent via email (check also your SPAM folder).

If you can't find your email please contact us.

Non-presenting attendee seats are fully booked.

Publication on Power Electronic Devices and Components (PEDC)

This year GaN Marathon has stipulated an agreement with the new Elsevier Journal Power Electronic Devices and Components (PEDC).
Presenting authors will have the possibility of submitting an extended version of their abstract to a special issue of PEDC. After review and upon acceptance, the extended abstract will be published on PEDC, giving high visibility to the related results.

Power Electronic Devices and Components is a new gold open access journal, therefore contributing to this special issue will be an opportunity for you to play a leading role in defining the scope and development of this new title. We believe that the GaN Marathon special issue will be an outstanding contribution to our community’s understanding of the topic.

Note that open access fees will be waived for GaN Marathon attendees.

CALL FOR PAPER IS OPEN

This year GaN Marathon has stipulated an agreement with the new Elsevier Journal Power Electronic Devices and Components (PEDC). Presenting authors will have the possibility of submitting an extended version of their abstract to a special issue of PEDC. After review and upon acceptance, the extended abstract will be published on PEDC, giving high visibility to the related results.

Power Electronic Devices and Components is a new gold open access journal, therefore contributing to this special issue will be an opportunity for you to play a leading role in defining the scope and development of this new title. We believe that the GaN Marathon special issue will be an outstanding contribution to our community’s understanding of the topic.

Note that open access fees will be waived for GaN Marathon attendees.

These Are

Our Speakers

KEYNOTE

Hiroshi Amano Nagoya University
The Role of Nitride Semiconductors in Connecting Science and Society
Aurelien David Google
Revisiting the physics of InGaN LEDs: Myths and facts
Antony Sanders Infineon Technologies Austria AG
Integrated GaN Partitioning: Challenges and Solutions

INVITED

Davide Bisi
Transphorm Inc.
Michal Bockowski
Institute of High Pressure Physics of the Polish Academy of Sciences
Srabanti Chowdhury
Stanford University
Eduardo Marty Chumbes
Raytheon Technologies
Patrick Fay
University of Notre Dame
Karen Geens
IMEC
Nicolas Grandjean
Institute of Physics, School of Basic Sciences, EPFL
Åsa Haglund
Chalmers University of Technology
Oliver Hilt
Ferdinand-Braun-Institut
Christian Huber
Bosch
Kazutada Ikenaga
Taiyo Nippon Sanso
Ferdinando Iucolano
STMicroelectronics
Jose Jimenez
Qorvo
Kozo Makiyama
Sumitomo Electric Industries Ltd.
Elison Matioli
Institute of Electrical and Micro-Engineering, EPFL
Farid Medjdoub
CNRS-IEMN
Jeong-Sun Moon
HRL Laboratories
Kalparupa Mukherjee
Cambridge GaN Devices
Tetsuo Narita
Toyota Central R&D Labs.,Inc.
Gianmauro Pozzovivo
Infineon Technologies Austria AG
Rachel Oliver
Cambridge University
Herbert Pairitsch
Infineon Technologies Austria AG
Michael Mikulla
Fraunhofer IAF - Inatech
Jan Ruschel
Ferdinand-Braun-Institut
Ulrich Schwarz
TU Chemnitz, Institute of Physics
Keisuke Shinohara
Teledyne Scientific Company
Mayank Shrivastava
IISC
Ulrich Steegmueller
ams OSRAM
Arno Stockman
BelGaN
Marnix Tack
Gan Valley / BelGaN
Tim Wernicke
Technische Universität Berlin, Institute of Solid State Physics
Han Wui Then
Intel
Enrico Zanoni
University of Padova
Davide Bisi Transphorm Inc.
Michal Bockowski Institute of High Pressure Physics of the Polish Academy of Sciences
Srabanti Chowdhury Stanford University
Eduardo Marty Chumbes Raytheon Technologies
Patrick Fay Department of Electrical Engineering, University of Notre Dame
Karen Geens IMEC
Nicolas Grandjean Institute of Physics, School of Basic Sciences, EPFL
Åsa Haglund Chalmers University of Technology
Oliver Hilt Ferdinand-Braun-Institut
Christian Huber Bosch
Kazutada Ikenaga Taiyo Nippon Sanso
Ferdinando Iucolano STMicroelectronics
Jose Jimenez Qorvo
Kozo Makiyama Sumitomo Electric Industries Ltd.
Elison Matioli Institute of Electrical and Micro-Engineering, EPFL
Farid Medjdoub CNRS-IEMN
Michael Mikulla Fraunhofer IAF - Inatech
Jeong-Sun Moon HRL Laboratories
Kalparupa Mukherjee Cambridge GaN Devices
Tetsuo Narita Toyota Central R&D Labs.,Inc.
Gianmauro Pozzovivo Infineon Technologies Austria AG
Rachel Oliver Department of Materials Science and Metallurgy, Cambridge University
Herbert Pairitsch Infineon Technologies Austria AG
Jan Ruschel Ferdinand-Braun-Institut
Ulrich Schwarz TU Chemnitz, Institute of Physics
Keisuke Shinohara Teledyne Scientific Company
Mayank Shrivastava IISC
Ulrich Steegmueller ams OSRAM
Arno Stockman BelGaN
Tim Wernicke Technische Universität Berlin, Institute of Solid State Physics
Han Wui Then Intel
Enrico Zanoni University of Padova

D. Bisi

Transphorm Inc.

M. Bockowski

unipress

S. Chowdhury

Stanford University

E. M. Chumbes

Infineon, Austria

P. Fay

University of

Notre-Dame

K. Geens

IMEC

N. Grandjean

EPFL

Å. Haglund

Chalmers University

O. Hilt

FBH

C. Huber

Bosch

F. Iucolano

STMicroelectronics

J. Jimenez

Qorvo

K. Makiyama

Sumitomo Electric

E. Matioli

EPFL

F. Medjdoub

CNRS-IEMN

J. Moon

HRL Laboratories

K. Mukherjee

CGD

T. Narita

Toyota

G. Pozzovivo

Infineon Austria

R. Oliver

Cambridge

University

H. Pairitsch

Infineon Austria

M. Mikulla

Fraunhofer IAF –

Inatech

J. Ruschel

FBH

U. Schwarz

TU Chemnitz

K. Shinohara

Teledyne

M. Shrivastava

IISC

U. Steegmueller

ams OSRAM

A. Stockman

BelGaN

M. Tack

Gan Valley / BelGaN

T. Wernicke

TU Berlin

H. W. Then

Intel

E. Zanoni

University of Padova

Attendees from all over the world are welcome! GaN Marathon 2022 had speakers from 15 countries!

Discover

The Topics

Have A Look At The

Event Schedule

OPENING CEREMONY – Matteo Meneghini (General Chair)

Chair: Enrico Zanoni

  • 9:30 – Hiroshi Amano, Nagoya University  Vertical devices on bulk nitride substrates
  • 10:00 – Anthony Sanders, Infineon Technologies  Integrated GaN Partitioning: Challenges and Solutions
  • 10:30 – Aurelien David, Google  Revisiting the physics of InGaN LEDs: Myths and facts

Chair: Åsa Haglund

  • 11:20 – Ulrich Steegmueller, ams OSRAM  Game Changing semiconductor Technologies – From high-power to miniaturized and smart LEDs
  • 11:40 – Nicolas Grandjean, Institute of Physics, School of Basic Sciences, EPFL  Efficiency of III-nitride quantum wells: the importance of point defects
  • 12:00 – Rachel Oliver, Department of Materials Science and Metallurgy, Cambridge University  Microscopy of cubic nitrides for LEDs
  • 12:20 – Tim Wernicke, Technische Universität Berlin, Institute of Solid State Physics  Metalorganic vapor phase epitaxy of AlGaN based UVC LEDs
  • 12:40 – Ulrich Schwarz, TU Chemnitz, Institute of Physics  Transition between quantum confinement and bulk-like behavior in wide polar quantum wells

Lunch Break at Pizzeria Da Pino, Piazza Bra, 15 min Walking Distance from the Conference

  • 14:30 – Michael Mikulla, Fraunhofer IAF – Inatech  Advances in mm-Wave Gallium Nitride HEMTS and MMICs in Gain and Efficiency
  • 14:50 – Jose Jimenez, Qorvo  20 lessons learnt on 20 years working in GaN-RF
  • 15:10 – Eduardo Marty Chumbes, Raytheon Technologies  Millimeter-wave ScAlN RF Transistors – Status and Future Direction
  • 15:30 – Franco Ercolano, University of Bologna  TCAD analysis of the High-Temperature Reverse-Bias Stress on AlGaN/GaN HEMT
  • 15:40 – Farid Medjdoub, CNRS-IEMN  The next millimeter-wave breakthrough coming up with advanced AlN/GaN transistors
  • 16:00 – Aniruddhan Gowrisankar, IISC  Engineering a Low RF Loss HEMT-on-Silicon
  • 16:10 – Patrick Fay, Department of Electrical Engineering, University of Notre Dame  Advances in Polarization Engineering for Power, Linearity, and Thermal Management
  • 16:50 – Kalparupa Mukherjee, CamGaN Devices  Next generation of ICeGaN for superior no load and light load performance
  • 17:10 – Christian Huber, Bosch  Is vertical GaN on foreign substrates feasible? Insights from the YESvGaN project
  • 17:30 – Shun Lu, Nagoya University  Recess-etching-free GaN p-MOSFET achieved by p-type contact to GaN/AlGaN heterojunction with Mg-annealing process
  • 17:40 – Srabanti Chowdhury, Stanford University  Diamond on GaN: On achieving low temperature growth and low thermal boundary resistance
  • 18:00 – Davide Bisi, Transphorm Inc.  Latest Progress on GaN Cascode Devices for High-Power Applications
  • 18:20 – Lars Heuken, Porsche  Elevating Electric Sports Cars: GaN Power Semiconductors Unleashed
  • 18:30 – Karen Geens, IMEC  GaN power device fabrication for extension to higher voltages
  • 18:50 – Patrick Diehle, Fraunhofer Institute for Microstructure of Materials and Systems IMWS  Doping investigation of structured GaN devices by highly lateral resolved TOF-SIMS

(INVITATION ONLY) – MEETING AT 20:00 IN FRONT OF THE HOTEL

Chair: Tim Wernicke

  • 8:25 – Youssef Hamadoui, CNRS-IEMN  High quality fully versus pseudo vertical GaN-on-Silicon pn diodes
  • 8:35 – Arno Stockman, BelGaN  Dynamic phenomena in 650V p-GaN technology
  • 9:00 – Nicolò Zagni, University of Modena and Reggio Emilia  Insights from Device Simulations into Trapping Effects in Vertical GaN Power Devices
  • 9:10 – Gianmauro Pozzovivo, Infineon Technologies Austria AG  GaN Power HEMTs: Next Level of Performance-to-Cost Ratio for Broader Market Adoption
  • 9:30 – Tetsuo Narita, Toyota Central R&D Labs.,Inc.  Engineering of Channel Mobility, Threshold Voltage and Reliability in GaN MOSFETs Using AlSiO/AlN Gate Stacks Formed By Plasma-Enhanced Atomic Layer Deposition
  • 9:50 – Ferdinando Iucolano, STMicroelectronics  GaN Devices: Industrial trends and challenges
  • 10:10 – Yuji Zhao, Rice University  Selective area regrowth and doping of GaN, diamond and BN for power devices
  • 10:20 – Herbert Pairitsch, Infineon Technologies Austria AG  Power-GaN, the long path from materials science to innovative products

Chair: Matteo Meneghini

  • 11:00 – Jan Kuzmik Slovak, Academy of Sciences  InN/InAlN Heterostructures for New Generation of Fast Electronics
  • 11:10 – Michal Bockowski, Institute of High Pressure Physics of the Polish Academy of Sciences  GaN-on-GaN technology from the perspective of materials science
  • 11:30 – Elke Meissner, Fraunhofer Institute for Integrated Systems and Device Technology IISB  Growth of thick freestanding 3-inch GaN crystals by vertical down-flow HVPE
  • 11:40 – Christof Mauder, Aixtron SE  300 mm MOCVD Reactor Technology for Vertical GaN-on-Si Power Devices
  • 12:00 – Yingying Lin, Nagoya University  Anisotropic hole transport along [0001] and [11-20] direction in p-doped (10-10) GaN
  • 12:10 – Kazutada Ikenaga, Taiyo Nippon Sanso Corporation  Advancements in MOCVD and Supporting Equipment Technology for GaN
  • 12:30 – Gaudenzio Meneghesso, University of Padova  The GaN4AP projects: results and challenges

Lunch break Hotel Due Torri, Lobby

Chair: Gaudenzio Meneghesso

  • 13:40 – Enrico Zanoni, University of Padova  Degradation of RF devices
  • 14:00 – Keisuke Shinohara, Teledyne Scientific Company  GaN HEMT scaling for millimeter-wave applications
  • 14:20 – Yvon Cordier, Univ. Côte d’Azur, CNRS, CRHEA  Evaluation of ScAlN/GaN HEMTs grown by ammonia source molecular beam epitaxy
  • 14:30 – Kozo Makiyama, Sumitomo Electric Industries Ltd.  High-power-density N-polar MIS GaN HEMT for power amplifiers
  • 14:50 – Jeong-Sun Moon, HRL  Laboratories Millimeter-wave Graded-channel GaN HEMT Technology for 5G and Beyond
  • 15:10 – Hossein Yazdani, Ferdinand-Braun Institute  Si-implantation for Low Ohmic Contact Resistances in RF GaN HEMTs

Break and Closing of Day 2

15:30 – Follow ACME people to bus stop – Meeting Point in front of the Hotel

Bus Transfer to Lazise on the shore of the Garda Lake (45 min)

At Dogana Veneta

Break/Free Time during Dinner Setup (enjoy Lazise and the lakeside!)

At Dogana Veneta

COMING SOON

Chair: Arno Stockman

  • 8:20 – Malik Rasik Rashid, IISC  Physical Insights into the Processes Leading to Dynamic RON and its Mitigation Through Novel Surface Passivation Scheme
  • 8:40 – Han Wui Then, Intel  50nm DrGaN in 3D Monolithic GaN MOSHEMT and Silicon PMOS Process on 300mm GaN-on-Si(111)
  • 9:00 – Elison Matioli, Institute of Electrical and Micro-Engineering, EPFL  Emerging Technologies for GaN-based RF and vertical power devices
  • 9:20 – Oliver Hilt, Ferdinand-Braun-Institut  AlN-based GaN channel HEMTs on AlN and SiC substrates
  • 9:40 – Carlo De Santi, University of Padova  p-GaN gate reliability physics

Chair: Ulrich Schwarz

  • 10:10 – Claude Weisbuch, Ecole Polytechnique  What we learned from photo and electro emission experiments in III-nitrides
  • 10:20 – Matteo Buffolo, University of Padova  Understanding UV-C LEDs degradation
    10:30 – Lukas Uhlig Chemnitz University of Technology, Fast lateral mode competition phenomena in InGaN broad-ridge laser diodes
  • 10:40 – Åsa Haglund, Chalmers University of Technology  Ultraviolet (light my way)…towards surface-emitting UV lasers
  • 11:00 – Saulius Marcinkevicius, KTH Royal Institute of Technology  Hole Injection into Quantum Wells of Long Wavelength GaN LEDs
  • 11:10 – Jan Ruschel, Ferdinand-Braun-Institut  Operation-induced degradation effects in AlGaN-based UV LEDs
  • 11:30 – Bernd Witzigmann, Friedrich-Alexander Universität Erlangen-Nürnberg (FAU)  Impact of alloy fluctuations on optical gain in AlGaN based UV lasers

Matteo Meneghini (General Chair)

Jane Roberts

Front End Developer - Vehement

Jacob Freeman

UI Designer - Massive Dynamic

Frank Ferguson

Visual Designer - Globex

Jacqueline Knight

Content Strategist - Umbrella IT

Betty Hopkins

UX Designer - Initech

Find About

The Organizing and Scientific Committee

Organizing Committee

Matteo Meneghini

GENERAL CHAIR

Enrico Zanoni

HONORARY CHAIR

Fabiana Rampazzo, Francesco Piva

CONFERENCE MANAGERS

Matteo Buffolo, Carlo De Santi

PUBLICATION CHAIRS

Scientific Committee

Frank Altmann

Fraunhofer, IMWS

Oliver Ambacher

Fraunhofer, IAF

Sylvain Delage

III-V Labs

Thomas Detzel

Infineon, Austria

Karen Geens

IMEC

Francesco Iannuzzo

Aalborg University

Juraj Marek

STUBA

Farid Medjdoub

IEMN

Matteo Meneghini

Università di Padova

Piotr Perlin

Unipress

Ulrich Schwarz

TU Chemnitz

Martin Strassburg

ams OSRAM

Arno Stockman

BelGaN

William Vandendaele

CEA-LETI

Andreas Waag

TU Braunschweig

Tim Wernicke

TU Berlin

Enrico Zanoni

Università di Padova

Experience

The Venue...

Hotel Due Torri

Piazza Sant’Anastasia, 4 – 37121 Verona, Italy

ATTENTION! The GaN Marathon does not have any official affiliation with hotels or accommodation structures. Therefore, it is your responsibility to independently search and secure your own hotel or accommodation for the event.

... And The Conference Reception

Dogana Veneta

Piazzetta Partenio, 13 – 37017 Lazise, Verona, Italy

Our Great Platinum Sponsors

Our Great Gold Sponsors

Need More Informations?

Contact Us

If you experience any problem or need more informations about the event, get in touch with us and we will try to get back to you as soon as possible.

Email: info@ganmarathon.com