GaN Marathon 2024

JUNE 10TH - 12TH 2024, VERONA, ITALY

Join GaN Marathon 2024!
Discuss with the experts the latest advancements on GaN technologies.

News:

HAVE A LOOK AT THE ACCEPTED ABSTRACT TITLES THROUGH THE SPEAKER MENU.

REMEMBER, THE REGISTRATIONS WILL OPEN ON THE 18TH OF MARCH.

GaN Marathon 2024 will start in:

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Just A Few Words

About The Event

GaN Marathon 2024 will be held in the heart of Verona, a UNESCO world heritage and set of Shakespeare’s play Romeo and Juliet. Several invited and regular speakers from Europe and overseas will discuss the latest advancement of GaN technologies in microwave, mm-wave, 5G communications, power conversion and optoelectronics.

Where

Hotel Due Torri

Piazza S.Anastasia, 4 – 37121 Verona, Italy

When

10th – 12th June 2024 Monday to Wednesday

Back-to-back talks and a dedicated poster session will favor the discussion. Coffee breaks and social lunches / dinners will ease networking.

Registrations at the GaN Marathon 2024 will open on

March 18th, 2024

3 keynote speakers - 30 invited speakers

Submitted papers will be presented in oral form, or during a dedicated poster session on the shores of Garda Lake, to ensure great visibility to your work.

Registrations will open on the 18th of March

Have a look at the accepted abstract titles!

Publication on Power Electronic Devices and Components (PEDC)

This year GaN Marathon has stipulated an agreement with the new Elsevier Journal Power Electronic Devices and Components (PEDC).
Presenting authors will have the possibility of submitting an extended version of their abstract to a special issue of PEDC. After review and upon acceptance, the extended abstract will be published on PEDC, giving high visibility to the related results.

Power Electronic Devices and Components is a new gold open access journal, therefore contributing to this special issue will be an opportunity for you to play a leading role in defining the scope and development of this new title. We believe that the GaN Marathon special issue will be an outstanding contribution to our community’s understanding of the topic.

Note that open access fees will be waived for GaN Marathon attendees.

This year GaN Marathon has stipulated an agreement with the new Elsevier Journal Power Electronic Devices and Components (PEDC). Presenting authors will have the possibility of submitting an extended version of their abstract to a special issue of PEDC. After review and upon acceptance, the extended abstract will be published on PEDC, giving high visibility to the related results.

Power Electronic Devices and Components is a new gold open access journal, therefore contributing to this special issue will be an opportunity for you to play a leading role in defining the scope and development of this new title. We believe that the GaN Marathon special issue will be an outstanding contribution to our community’s understanding of the topic.

Note that open access fees will be waived for GaN Marathon attendees.

These Are

Our Speakers

KEYNOTE

Hiroshi Amano Nagoya University
The Role of Nitride Semiconductors in Connecting Science and Society
Aurelien David Google
Coming Soon
Antony Sanders Infineon Technologies Austria AG
Integrated GaN Partitioning: Challenges and Solutions

INVITED

Davide Bisi
Transphorm Inc.
Michal Bockowski
Institute of High Pressure Physics of the Polish Academy of Sciences
Srabanti Chowdhury
Stanford University
Eduardo Marty Chumbes
Raytheon Technologies
Patrick Fay
University of Notre Dame
Karen Geens
IMEC
Nicolas Grandjean
Institute of Physics, School of Basic Sciences, EPFL
Åsa Haglund
Chalmers University of Technology
Oliver Hilt
Ferdinand-Braun-Institut
Christian Huber
Bosch
Ferdinando Iucolano
STMicroelectronics
Jose Jimenez
Qorvo
Kozo Makiyama
Sumitomo Electric Industries Ltd.
Elison Matioli
Institute of Electrical and Micro-Engineering, EPFL
Farid Medjdoub
CNRS-IEMN
Jeong-Sun Moon
HRL Laboratories
Kalparupa Mukherjee
Cambridge GaN Devices
Tetsuo Narita
Toyota Central R&D Labs.,Inc.
Gianmauro Pozzovivo
Infineon Technologies Austria AG
Rachel Oliver
Cambridge University
Herbert Pairitsch
Infineon Technologies Austria AG
Ruediger Quay
Fraunhofer IAF - Inatech
Jan Ruschel
Ferdinand-Braun-Institut
Ulrich Schwarz
TU Chemnitz, Institute of Physics
Keisuke Shinohara
Teledyne Scientific Company
Mayank Shrivastava
IISC
Ulrich Steegmueller
ams OSRAM
Arno Stockman
BelGaN
Marnix Tack
Gan Valley / BelGaN
Tim Wernicke
Technische Universität Berlin, Institute of Solid State Physics
Han Wui Then
Intel
Enrico Zanoni
University of Padova
Enrico Zanoni
University of Padova
Davide Bisi Transphorm Inc.
Michal Bockowski Institute of High Pressure Physics of the Polish Academy of Sciences
Srabanti Chowdhury Stanford University
Eduardo Marty Chumbes Raytheon Technologies
Patrick Fay Department of Electrical Engineering, University of Notre Dame
Karen Geens IMEC
Nicolas Grandjean Institute of Physics, School of Basic Sciences, EPFL
Åsa Haglund Chalmers University of Technology
Oliver Hilt Ferdinand-Braun-Institut
Christian Huber Bosch
Ferdinando Iucolano STMicroelectronics
Jose Jimenez Qorvo
Kozo Makiyama Sumitomo Electric Industries Ltd.
Elison Matioli Institute of Electrical and Micro-Engineering, EPFL
Farid Medjdoub CNRS-IEMN
Jeong-Sun Moon HRL Laboratories
Kalparupa Mukherjee Cambridge GaN Devices
Tetsuo Narita Toyota Central R&D Labs.,Inc.
Gianmauro Pozzovivo Infineon Technologies Austria AG
Rachel Oliver Department of Materials Science and Metallurgy, Cambridge University
Herbert Pairitsch Infineon Technologies Austria AG
Ruediger Quay Fraunhofer IAF - Inatech
Jan Ruschel Ferdinand-Braun-Institut
Ulrich Schwarz TU Chemnitz, Institute of Physics
Keisuke Shinohara Teledyne Scientific Company
Mayank Shrivastava IISC
Ulrich Steegmueller ams OSRAM
Arno Stockman BelGaN
Marnix Tack Gan Valley / BelGaN
Tim Wernicke Technische Universität Berlin, Institute of Solid State Physics
Han Wui Then Intel
Enrico Zanoni University of Padova

D. Bisi

Transphorm Inc.

M. Bockowski

unipress

S. Chowdhury

Stanford University

E. M. Chumbes

Infineon, Austria

P. Fay

University of

Notre-Dame

K. Geens

IMEC

N. Grandjean

EPFL

Å. Haglund

Chalmers University

O. Hilt

FBH

C. Huber

Bosch

F. Iucolano

STMicroelectronics

J. Jimenez

Qorvo

K. Makiyama

Sumitomo Electric

E. Matioli

EPFL

F. Medjdoub

CNRS-IEMN

J. Moon

HRL Laboratories

K. Mukherjee

CGD

T. Narita

Toyota

G. Pozzovivo

Infineon Austria

R. Oliver

Cambridge

University

H. Pairitsch

Infineon Austria

R. Quay

Fraunhofer IAF –

Inatech

J. Ruschel

FBH

U. Schwarz

TU Chemnitz

K. Shinohara

Teledyne

M. Shrivastava

IISC

U. Steegmueller

ams OSRAM

A. Stockman

BelGaN

M. Tack

Gan Valley / BelGaN

T. Wernicke

TU Berlin

H. W. Then

Intel

E. Zanoni

University of Padova

Attendees from all over the world are welcome! GaN Marathon 2022 had speakers from 15 countries!

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The Topics

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Event Schedule

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Jane Roberts

Front End Developer - Vehement

Jacob Freeman

UI Designer - Massive Dynamic

Frank Ferguson

Visual Designer - Globex

Jacqueline Knight

Content Strategist - Umbrella IT

Betty Hopkins

UX Designer - Initech

Find About

The Organizing and Scientific Committee

Organizing Committee

Matteo Meneghini

GENERAL CHAIR

Enrico Zanoni

HONORARY CHAIR

Fabiana Rampazzo, Francesco Piva

CONFERENCE MANAGERS

Matteo Buffolo, Carlo De Santi

PUBLICATION CHAIRS

Scientific Committee

Frank Altmann

Fraunhofer, IMWS

Oliver Ambacher

Fraunhofer, IAF

Sylvain Delage

III-V Labs

Thomas Detzel

Infineon, Austria

Karen Geens

IMEC

Francesco Iannuzzo

Aalborg University

Juraj Marek

STUBA

Farid Medjdoub

IEMN

Matteo Meneghini

Università di Padova

Piotr Perlin

Unipress

Ulrich Schwarz

TU Chemnitz

Martin Strassburg

ams OSRAM

Arno Stockman

BelGaN

William Vandendaele

CEA-LETI

Andreas Waag

TU Braunschweig

Tim Wernicke

TU Berlin

Enrico Zanoni

Università di Padova

Experience

The Venue...

Hotel Due Torri

Piazza Sant’Anastasia, 4 – 37121 Verona, Italy

ATTENTION! The GaN Marathon does not have any official affiliation with hotels or accommodation structures. Therefore, it is your responsibility to independently search and secure your own hotel or accommodation for the event.

... And The Conference Reception

Dogana Veneta

Piazzetta Partenio, 13 – 37017 Lazise, Verona, Italy

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Need More Informations?

Contact Us

If you experience any problem or need more informations about the event, get in touch with us and we will try to get back to you as soon as possible.

Email: info@ganmarathon.com