JUNE 7TH - 10TH 2026, FLORENCE, ITALY
GaN Marathon 2026!
The biennal workshop on GaN technologies is coming back.
News:
THE OFFICIAL PROGRAM OF THE GAN MARATHON 2026 IS OUT!
REGISTRATION NOW POSSIBLE FOR PRESENTING ATTENDEES ONLY TRHOUGH THE EMAIL LINK.
NON-PRESENTING ATTENDEES SEATS ARE FULLY BOOKED!
GaN Marathon 2026 will start in:
Just A Few Words
About The Event
GaN Marathon 2026 will be held in the heart of Florence, the birthplace of the Renaissance. Several invited and regular speakers will discuss the latest advancements in GaN technologies in microwave, mm-wave, 5G communications, power conversion, and optoelectronics.
If you experience any problem or need more information about the event, get in touch with us and we will try to get back to you as soon as possible.
Where
Florence Chamber of Commerce
Piazza dei Giudici, 3, 50122 Firenze FI
When
7th – 10th June 2026 Sunday to Wednesday
Back-to-back talks and a dedicated poster session will favor the discussion. Coffee breaks and social lunches / dinners will ease networking.
Call For Papers
OPEN: October 13th, 2025
CLOSE: January 12th, 2026
CLOSE: January 19th, 2026
Registration will OPEN at
EARLY: March 9th, 2026
LATE: April 13th, 2026
SEATS ARE LIMITED
3 keynote speakers - 32 invited speakers
Submitted papers will be presented in oral form, or during a dedicated poster session at the GALA DINNER venue to ensure great visibility to your work.
Attention!
If you receive an email or phone call from any company or agent claiming to arrange hotel accommodations or assist with your registration for GaN Marathon 2026, please be aware that such claims may be fraudulent.
The GaN Marathon 2026 Organizing Committee has not entered into any contracts or agreements with external companies for accommodation services.
Do not share your personal or credit card information with such entities under any circumstances.
Registration Fees
Here you can find the updated registration fees required to participate in the GaN Marathon 2026 nd the included amenities:
-
€880
-
€1080
-
€680
-
€880
-
€150
The Regular and Student registration includes:
- Access to GaN Marathon 2026 conference;
- Conference kit;
- Printed proceedings;
- All Coffee Breaks;
- Lunches (June 10th and June 11th);
- Poster Session and Conference Dinner at La Fornace di Sammontana in Montelupo Fiorentino (bus transportation included).
- Short Courses are not included.
The Accompanying Person registration includes:
- Accompanying kit;
- Poster Session and Conference Dinner at La Fornace di Sammontana in Montelupo Fiorentino (bus transportation included).
A New Interesting Learning Opportunity
GaN Marathon Short Courses
The GaN Marathon 2026 conference will host a set of short courses (with more to come soon) on Sunday, June 7, 2026, from 14:30 to 18:00. The program will feature two expert-led lectures covering key advanced and innovative topics in nitride semiconductors.
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€200
-
€100
HURRY UP!
Registrations are OPEN!
Please, read carefully the instructions in the registration page. For any request regarding the registration procedure please, use the contact form.
Thank you all for submitting to the GaN Marathon 2026! For any request regarding the submissions please use the contact form.
You'll receive a response in the following weeks once the scientific committee has evaluated you submission.
Is now possible to submit your original work to the GaN marathon 2026 for evaluation.
Submission Deadline Extension January 19th, 2026
REGISTRATION IS NOW POSSIBLE FOR PRESENTING ATTENDEES ONLY, THROUGH THE LINK SENT BY EMAIL. CHECK ALSO YOUR SPAM FOLDER
NON-PRESENTING ATTENDEE SEATS ARE FULLY BOOKEDPublication on Power Electronic Devices and Components (PEDC)
This year GaN Marathon has stipulated an agreement with the new Elsevier Journal Power Electronic Devices and Components (PEDC).
Presenting authors will have the possibility of submitting an extended version of their abstract to a special issue of PEDC. After review and upon acceptance, the extended abstract will be published on PEDC, giving high visibility to the related results.
Power Electronic Devices and Components is a new gold open access journal, therefore contributing to this special issue will be an opportunity for you to play a leading role in defining the scope and development of this new title. We believe that the GaN Marathon special issue will be an outstanding contribution to our community’s understanding of the topic.
Note that open access fees will be waived for GaN Marathon attendees.
CALL FOR PAPER IS OPEN
Publication on Power Electronic Devices and Components (PEDC)
This year GaN Marathon has stipulated an agreement with the new Elsevier Journal Power Electronic Devices and Components (PEDC). Presenting authors will have the possibility of submitting an extended version of their abstract to a special issue of PEDC. After review and upon acceptance, the extended abstract will be published on PEDC, giving high visibility to the related results.
Power Electronic Devices and Components is a new gold open access journal, therefore contributing to this special issue will be an opportunity for you to play a leading role in defining the scope and development of this new title. We believe that the GaN Marathon special issue will be an outstanding contribution to our community’s understanding of the topic.
Note that open access fees will be waived for GaN Marathon attendees.
These Are
Our Speakers
KEYNOTE
INVITED
Shigefusa Chichibu
Tohuku University
Srabanti Chowdhury
Stanford University
Mayank Bulsara
Nippon Sanso
Nadine Collaert
IMEC
Patrick Fay
Notre Dame University
Simon Fichtner
Kiel University
Mitsuru Funato
Kyoto University
Samuel Graham
University of Maryland
Nicolas Grandjean
EPFL
Kolja Haberland
Laytec
Åsa Haglund
Chalmers University of Technology
Motoaki Iwaya
Mejo University
Debdeep Jena
Cornell University
Martin Kuball
Bristol University
Maki Kushimoto
Nagoya University
Elison Matioli
Institute of Electrical and Micro-Engineering, EPFL
Matteo Meneghini
University of Padova
Tetsuo Narita
Toyota Central R&D Labs.,Inc.
Tomás Palacios
MIT
Siddharth Rajan
Ohio State University
Ulrich Schwarz
TU Chemnitz
Chris Van de Walle
UCSB
Huili Grace Xing
Cornell University
Enrico Zanoni
University of Padova
D. Bisi
Transphorm Inc.
M. Bockowski
unipress
S. Chowdhury
Stanford University
E. M. Chumbes
Infineon, Austria
P. Fay
University of
Notre-Dame
K. Geens
IMEC
N. Grandjean
EPFL
Å. Haglund
Chalmers University
O. Hilt
FBH
C. Huber
Bosch
F. Iucolano
STMicroelectronics
J. Jimenez
Qorvo
K. Makiyama
Sumitomo Electric
E. Matioli
EPFL
F. Medjdoub
CNRS-IEMN
J. Moon
HRL Laboratories
K. Mukherjee
CGD
T. Narita
Toyota
G. Pozzovivo
Infineon Austria
R. Oliver
Cambridge
University
H. Pairitsch
Infineon Austria
M. Mikulla
Fraunhofer IAF –
Inatech
J. Ruschel
FBH
U. Schwarz
TU Chemnitz
K. Shinohara
Teledyne
M. Shrivastava
IISC
U. Steegmueller
ams OSRAM
A. Stockman
BelGaN
M. Tack
Gan Valley / BelGaN
T. Wernicke
TU Berlin
H. W. Then
Intel
E. Zanoni
University of Padova
Attendees from all over the world are welcome! GaN Marathon 2022 had speakers from 15 countries!
Discover
The Topics
Have A Look At The
Event Schedule
Download from here the FULL Event Schedule or...
...See the Day-to-Day Program down below
14:35 - GM26 Short Courses
Only for registered attendees
14:35-14:45 Matteo Meneghini – Short Courses Opening
14.45-15.45 Patrick Fay – Impact Ionization in Nitrides Semiconductors
15.45-16.45 Stefano Leone – Expanding the Boundaries of Nitride Epitaxy: From Carbon-Free Growth to Functional Doping and Novel Alloy
16:45-17:00 Coffee break
17.00-18.00 Debdeep Jena –Polarization Doping in Nitrides: Advantages and Perspectives
09:00 - Conference Start
OPENING CEREMONY – Matteo Meneghini (General Chair)
09:30 - Innovation on III-N device fabrication and characterization
- 9:30 – Hiroshi Amano, Nagoya University (Keynote Talk) Emerging Functionalities in Nitride Semiconductors Enabled by Ferroelectric Materials.
- 10:00 – Umesh Mishra, UCSB (Keynote Talk) The many faces of GaN
- 10:30 – Nicolas Grandjean, EPFL Non-radiative recombination in InGaN/GaN quantum wells: dislocations versus point defects
- 10:50 – Jonas Lähnemann, Paul-Drude-Institut für Festkörperelektronik The UV-C challenge: Insights from spatio- and time-resolved cathodoluminescence spectroscopy
- 11:00 – Rintaro Kobayashi, Meijo University Growth-Temperature Dependence and Physical Origin of Optical Gain in AlGaN-Based UV-B Laser Diodes
11:30 - Advanced research in III-Nitrides (including ASPIRE session)
- 11:30 – Manuel Fregolent, Università degli Studi di Padova (ASPIRE) Development and characterization of p-channel FETs on low-doped p-GaN with advanced Ohmic contacts
- 11:40 – Tomas Palacios, MIT (ASPIRE) GaN Technologies to Enable Back-Side Power Delivery
- 12:00 – Martin Kuball, Bristol University (ASPIRE) Pathways for >3kV power devices: Opportunities in AlGaN and Gallium Oxide
- 12:20 – Matteo Meneghini, Università degli Studi di Padova (ASPIRE) Impact Ionization in GaN HEMTs: Experimental Analysis and Reliability Implications
- 12:40 – Srabanti Chowdhury, Stanford University (ASPIRE) GaN power electronics for new applications
- 13:00 – Kolja Haberland, LayTec AG Connected metrology – in-situ and ex-situ metrology during front-end fabrication of GaN based vertical and lateral transistor structures
13:20 - Lunch + Poster Session 1
Lunche served at the conference venue
14:20 - Novel/optimized material properties and device structures
- 14:20 – Enrico Brusaterra, Ferdinand Braun Institut Vertical GaN Trench MOSFETs Under Dynamic Switching Stress
- 14:30 – Stefano Leone, Fraunhofer IAF; Epitaly Beyond Conventional MOCVD: precursor chemistry unlocks next-generation nitrides HEMTs
- 14:50 – Simon Fichtner, University Kiel Spontaneous Polarization and Ferroelectrictiy in III-N Semiconductors
- 15:10 – Shumeng Yan, Nagoya University High-Gain AlGaN/InGaN DHBTs Enabled by Mg/GaN Annealing-induced Suppression of Surface Recombination
- 15:20 – Åsa Haglund, Chalmers University Are photonic crystal surface emitting lasers perfect lasers or lasers for perfectionists?
- 15:40 – Motoaki Iwaya, Meijo University AlGaN UV-B Laser Diodes for Industrial Applications: Realization of Sharp Heterointerfaces via Low-Temperature MOVPE Growth
- 16:00 – Mitsuru Funato, Kyoto University Blue to red micro-LEDs
16:40 - Industrial perspective and advanced characterization
- 16:40 – Shigefusa Chichibu, Tohoku University Causes and countermeasures for the operation-induced power degradation issues in 275-nm-band AlGaN-based MQW LEDs
- 17:00 – Ulrich Schwarz, TU Chemnitz Far-field and mode prediction in photonic crystal surface emitting lasers (PCSELs)
- 17:20 – Sven Gerhard, amsOSRAM Next-Gen high-power blue and green GaN lasers
- 17:30 – Ferdinando Iucolano, STMicroelectronics Impact of a C-related Buffer traps on 650V GaN HEMTs: Correlation between dynamic RON drift and COSS/QOSS behavior
- 17:50 – Nicola Modolo, Infineon Technologies Austria AG From Regression Analysis in GaN HEMTs towards Voltage Proliferation and Aging Models
- 18:10 – Raoul Joly, Beneq Impact of Atomic Layer Deposition Surface Passivation on the Electrical Performance of p-GaN HEMT Devices
08:30 - Exploiting III-N properties for improved performance and reliability 1 (including ASPIRE session)
- 8:30 – Francesco Piva, Università degli Studi di Padova Origin of the positive ageing in 265 nm UV-C LEDs and its TCAD modeling
- 8:40 – Tim Wernicke, TU Berlin TBD
- 9:00 – Maki Kushimoto, Nagoya University Operational Characteristics of AlGaN Deep-Ultraviolet Laser Diodes on Bulk AlN Substrates
- 9:20 – Thomas Filz, ams OSRAM µLED-applications in automotive, visualization and communication
- 9:40 – Debdeep Jena, Cornell University (ASPIRE) TBD
- 10:00 – Yidi Yin, University of Bristol (ASPIRE) Temperature dependent electrical characteristics of ultrawide bandgap high Al-content AlGaN electronics
- 10:10 – Ambra Maria Vianello, Università degli Studi di Padova (ASPIRE) Characterization and Modeling of Vertical Diodes with AlGaN-Based p-type Distributed Polarization Doping
- 10:20 – Yingying Lin, Nagoya University (ASPIRE) Study of Beryllium Acceptor States in Aluminum Nitride Through Cathodoluminescence Analysis
- 10:30 – Yu-Hsin Cindy Chen, Cornell University (ASPIRE) Enhancement-mode AlN/GaN/AlN HEMTs
11:00 - High efficiency/high frequency devices and modeling
- 11:00 – Pierpaolo Palestri, University of Modena and Reggio Emilia Modeling AlGaN/GaN HEMTs degradation due to hot carrier injection in the passivation layer
- 11:10 – Elison Matioli, EPFL Leading edge roadmap for GaN devices
- 11:30 – Nadine Collaert, imec RF GaN Today: Maturity, Momentum, and What Comes Next
- 11:50 – Nicolò Zagni, University of Modena and Reggio Emilia Dispersion Effects in 0.25μm GaN RF HEMTs Integrating Ultra-Thin InGaN Back-Barrier
- 12:00 – Chris Van de Walle, UCSB Role of defects and impurities in efficiency and degradation of nitride devices
12:20 - Lunch + Poster Session 2
Lunch break Hotel Due Torri, Lobby
13:20 - Innovation on Wide and Ultra Wide Bandgap Devices (including ASPIRE session)
- 13:20 – Jia Wang, Nagoya University (ASPIRE) Thickness-Dependent Thermal Annealing of Magnesium on Gallium Nitride: Mechanisms on Barrier Modulation and Carrier Transport
- 13:30 – Huili Grace Xing, Cornell University (ASPIRE) AlN XHEMTs – a new kid on the block
- 13:50 – Siddharth Rajan, Ohio State University (ASPIRE) High-Performance Ultra-Wide Bandgap AlGaN Transistors
- 14:10 – Luca Mazzone, EPFL A 3.9 kV GaN-on-Si Polarization Superjunction SBD with Low Specific On-Resistance and Repeatable OFF-State up to 150°C
- 14:20 – Agnieszka Corley-Wiciak, ESRF – European Synchrotron Radiation Facility Operando and multimodal X-ray microscopy of strain and electromechanical coupling in GaN-on-Si HEMTs
- 14:30 – Hakan Cankat Gur, EPFL Displacement-Field-Enhanced GaN HEMTs with fT/fMAX = 220/420 GHz for Efficient Amplification at W-Band and Beyond
14:40 - Day 2 Closing
Break and Closing of Day 2
15:30 – Follow ACME people to bus stop – Meeting Point in front of the Hotel
16:40 - Poster Session 3
At Fornace Sammontana
20:00 - Conference Dinner
At Fornace Sammontana
9:00 - Exploiting III-N properties for improved performance and reliability 2 (including ASPIRE session)
- 9:00 – Minyeong Kim, University of Bristol (ASPIRE) Post-Etch H3PO4 Surface Treatment for Reliability Enhancement in β-Ga2O3 Trench Schottky Barrier Diodes
- 9:10 – Jimy Encomendero, Cornell University (ASPIRE) Resonant Tunneling Transport in GaN/AlN Multiple Barrier Heterostructures
- 9:20 – Aias Asteris, Cornell University (ASPIRE) High Mobility Multiple-Channel AlScN/GaN Heterostructures
- 9:30 – Samuel Graham, University of Maryland (ASPIRE) Thermal Management of AlGaN UWBG Devices for Next-Generation RF Applications
- 9:50 – Tetsuo Narita, Toyota Central R&D Labs., Inc. Control of Positive and Negative Bias Instability in GaN MOSFETs Using Crystalline AlN Interfacial Layer Technology
- 10:10 – Patrick Fay, University of Notre Dame Impact Ionization in Ultra-Wide Band Gap III-Ns: Measurement and Device Implications
10:50 - Optimizing and exploiting material properties for advanced reliability (including ASPIRE session)
Chair: Ulrich Schwarz
- 10:50 – Pierce Lonergan, Cornell University (ASPIRE) AlScN as an Electron Blocking Layer in Blue Light-Emitting Diodes: A First Look
- 11:00 – Kazutada Ikenaga, Nippon Sanso Enhancing Nitride Epitaxy Through Integrated MOCVD Technology
- 11:20 – Thorsten Zweipfennig, Aixtron SE Enabling GaN HEMT manufacturing on 300 mm Si substrates
- 11:40 – Enrico Zanoni, Università degli Studi di Padova TBD
- 12:00 – Tania Hemakumara, Oxford Instruments Innovative Plasma Processing Solutions for High Volume Manufacturing of GaN devices
- 12:20 – Yuji Zhao, Rice University Selective Area Diamond Growth on GaN for Thermal Management of High Power Devices
12:30 - 12:50 - Closing Ceremony and Awards
Matteo Meneghini (General Chair)
Find About
The Organizing and Scientific Committee
Organizing Committee
Matteo Meneghini
GENERAL CHAIR
Enrico Zanoni
HONORARY CHAIR
Fabiana Rampazzo, Francesco Piva
CONFERENCE MANAGERS
Matteo Buffolo, Carlo De Santi
PUBLICATION CHAIRS
Scientific Committee
Frank Altmann
Fraunhofer, IMWS
Oliver Ambacher
Fraunhofer, IAF
Thomas Detzel
Infineon
Åsa Haglund
Chalmers University
Farid Medjdoub
IEMN
Gaudenzio
Meneghesso
University of Padova
Matteo Meneghini
Università di Padova
Piotr Perlin
UNIPRESS
Ulrich Schwarz
TU Chemnitz
Martin Strassburg
ams OSRAM
William Vandendaele
CEA-LETI
Andreas Waag
TU Braunschweig
Tim Wernicke
TU Berlin
Hao Yu
IMEC
Enrico Zanoni
Università di Padova
Experience
The Venue
Camera di Commercio di Firenze
Piazza dei Giudici, 3, 50122 Firenze FI
GaN Marathon2026 will be held in the historic palace in Piazza dei Giudici, home to the Florence Chamber of Commerce.
Located in a historically rich area that once hosted the medieval Tiratoio della Trave (a wool-stretching workshop), the palace stands at the heart of Florence. The building overlooks the Arno River and is just a short walk from iconic landmarks such as the Uffizi Gallery, Piazza della Signoria, and Ponte Vecchio.
ATTENTION! The GaN Marathon does not have any official affiliation with hotels or accommodation structures. Therefore, it is your responsibility to independently search and secure your own hotel or accommodation for the event.
... And The Conference Reception
La Fornace di Sammontana
Via del Colle, 5, 50056 Montelupo Fiorentino, Firenze, Italy
Need More Informations?
Contact Us
If you experience any problem or need more informations about the event, get in touch with us and we will try to get back to you as soon as possible.
Email: info@ganmarathon.com