Speakers – GaN Marathon 2024

These Are

Our Keynote Speakers...

Hiroshi Amano

Nagoya University

The Role of Nitride Semiconductors in Connecting Science and Society

Professor Hiroshi Amano received Doctor of Engineering from Nagoya University. Currently he is a Director, Center for Integrated Research of Future Electronics, and a Professor, Institute of Materials and Systems for Sustainability, Nagoya University.

He shared the 2014 Nobel Prize in Physics with Prof. Isamu Akasaki and Prof. Shuji Nakamura “for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources”.

He is currently developing technologies for the fabrication of high-efficiency power semiconductor development and new energy-saving devices at Nagoya University.

Biography Collapse

BIOGRAPHY

Professor Hiroshi Amano received Doctor of Engineering from Nagoya University. Currently he is a Director, Center for Integrated Research of Future Electronics, and a Professor, Institute of Materials and Systems for Sustainability, Nagoya University.

He shared the 2014 Nobel Prize in Physics with Prof. Isamu Akasaki and Prof. Shuji Nakamura “for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources”.

He is currently developing technologies for the fabrication of high-efficiency power semiconductor development and new energy-saving devices at Nagoya University.

Aurelien David

Google

Revisiting the physics of InGaN LEDs: Myths and facts

Aurelien David received the Masters degree in quantum physics from Ecole Polytechnique, France, in 2003, and the Ph.D. degree in applied physics from Ecole Polytechnique, in collaboration with the University of California, Santa Barbara, CA, USA, in 2006.

From 2006 to 2010 he worked in the Advanced Laboratories at Philips Lumileds. He joined Soraa, Inc., Fremont, CA, USA, in 2010. His work is both theoretical and experimental; it focuses on semiconductor optics and physics, and aspects of III–Nitride LED’s efficiency. (Source: IEEE)

Biography Collapse

BIOGRAPHY

Aurelien David received the Masters degree in quantum physics from Ecole Polytechnique, France, in 2003, and the Ph.D. degree in applied physics from Ecole Polytechnique, in collaboration with the University of California, Santa Barbara, CA, USA, in 2006.,From 2006 to 2010 he worked in the Advanced Laboratories at Philips Lumileds. He joined Soraa, Inc., Fremont, CA, USA, in 2010. His work is both theoretical and experimental; it focuses on semiconductor optics and physics, and aspects of III–Nitride LED’s efficiency. (Source: IEEE)

Antony Sanders

Infineon Technologies Austria AG

Integrated GaN Partitioning: Challenges and Solutions

Anthony (Tony) Fraser Sanders is a Distinguished Engineer within the PSS Division of Infineon Technologies. Anthony is an IC Architecture responsible for over seeing PSS’s IC developments and defining Infineon’s next generation of IC Technologies.

Anthony earned a Bachelor Degree with Honors in Electrical and Electronic Engineering from the University of Nottingham in 1991 and joined Infineon Technologies, formerly Siemens HL, in 1996.

He authored 48 patents, written 18 papers and publications and contributed to two books across a wide range of design aspects from statistical analysis, high speed interfaces to power control. He chaired a number of JEDEC, OIF and IEEE Standards Groups and his current research focus on modelling of complex system and technologies.

Biography Collapse

BIOGRAPHY

Anthony (Tony) Fraser Sanders is a Distinguished Engineer within the PSS Division of Infineon Technologies. Anthony is an IC Architecture responsible for over seeing PSS’s IC developments and defining Infineon’s next generation of IC Technologies.

Anthony earned a Bachelor Degree with Honors in Electrical and Electronic Engineering from the University of Nottingham in 1991 and joined Infineon Technologies, formerly Siemens HL, in 1996.

He authored 48 patents, written 18 papers and publications and contributed to two books across a wide range of design aspects from statistical analysis, high speed interfaces to power control. He chaired a number of JEDEC, OIF and IEEE Standards Groups and his current research focus on modelling of complex system and technologies.

Hiroshi Amano

Nagoya University

The Role of Nitride Semiconductors in Connecting Science and Society

BIOGRAPHY

Professor Hiroshi Amano received Doctor of Engineering from Nagoya University. Currently he is a Director, Center for Integrated Research of Future Electronics, and a Professor, Institute of Materials and Systems for Sustainability, Nagoya University.

He shared the 2014 Nobel Prize in Physics with Prof. Isamu Akasaki and Prof. Shuji Nakamura “for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources”.

He is currently developing technologies for the fabrication of high-efficiency power semiconductor development and new energy-saving devices at Nagoya University.

Aurelien David

Google

Revisiting the physics of InGaN LEDs: Myths and facts

BIOGRAPHY

Aurelien David received the Masters degree in quantum physics from Ecole Polytechnique, France, in 2003, and the Ph.D. degree in applied physics from Ecole Polytechnique, in collaboration with the University of California, Santa Barbara, CA, USA, in 2006.,From 2006 to 2010 he worked in the Advanced Laboratories at Philips Lumileds. He joined Soraa, Inc., Fremont, CA, USA, in 2010. His work is both theoretical and experimental; it focuses on semiconductor optics and physics, and aspects of III–Nitride LED’s efficiency. (Source: IEEE)

Antony Sanders

Infineon Technologies Austria AG

Integrated GaN Partitioning: Challenges and Solutions

BIOGRAPHY

Anthony (Tony) Fraser Sanders is a Distinguished Engineer within the PSS Division of Infineon Technologies. Anthony is an IC Architecture responsible for over seeing PSS’s IC developments and defining Infineon’s next generation of IC Technologies.

Anthony earned a Bachelor Degree with Honors in Electrical and Electronic Engineering from the University of Nottingham in 1991 and joined Infineon Technologies, formerly Siemens HL, in 1996.

He authored 48 patents, written 18 papers and publications and contributed to two books across a wide range of design aspects from statistical analysis, high speed interfaces to power control. He chaired a number of JEDEC, OIF and IEEE Standards Groups and his current research focus on modelling of complex system and technologies.

...And Our Invited Speakers

Davide Bisi Transphorm Inc.

Latest Progress on GaN Cascode Devices for High-Power Applications

Michal Bockowski

Michal Bockowski Institute of High Pressure Physics of the Polish Academy of Sciences

GaN-on-GaN technology from the point of view of materials science - challenges and difficulties

srabanti chowdhury

Srabanti Chowdhury Standford University

Diamond on GaN: On achieving low temperature growth and low thermal boundary resistance

Eduardo Marty Chumbes Raytheon Technologies

Millimeter-wave ScAlN RF Transistors – Status and Future Direction

Patrick Fay Department of Electrical Engineering, University of Notre Dame

Advances in Polarization Engineering for Power, Linearity, and Thermal Management

Karen Geens IMEC

Power device fabrication for extension to high voltages

Nicolas Grandjean

Nicolas Grandjean Institute of Physics, School of Basic Sciences, EPFL

Efficiency of III-nitride quantum wells: the importance of point defects

Åsa Haglund Chalmers University of Technology

Ultraviolet (light my way)… towards surface-emitting UV lasers

GaNMarathon2024

Oliver Hilt Ferdinand-Braun-Institut

AlN-based GaN channel HEMTs on AlN and SiC substrates

Christian Huber

Christian Huber Bosch

Is vertical GaN on foreign substrates feasible? Insights from the YESvGaN project

Kazutada-Ikenaga

Kazutada Ikenaga Taiyo Nippon Sanso

Advancements in MOCVD and Supporting Equipment Technology for GaN

Ferdinando Iucolano

Ferdinando Iucolano STMicroelectronics

GaN Devices: Industrial trends and challenges

Jose Jimenez Qorvo

20 lessons learnt on 20 years working in GaN-RF

Kozo Makiyama Sumitomo Electric Industries Ltd.

High-power-density N-polar MIS GaN HEMT for power amplifiers

Elison Matioli Institute of Electrical and Micro-Engineering, EPFL

New prospects of GaN electronics

Farid Medjdoub CNRS-IEMN

The next millimeter-wave breakthrough coming up with advanced GaN transistors

Mikulla Michael

Michael Mikulla Fraunhofer IAF - Inatech

Advances in mm-Wave Gallium Nitride HEMTS and MMICs: Gain and Efficiency

Jeong-Sun Moon HRL Laboratories

Millimeter-wave GaN technology: Challenges and Opportunities

Kalparupa Mukherjee

Kalparupa Mukherjee Cambridge GaN Devices

Next generation of ICeGaN for superior no load and light load performance

Tetsuo Narita Toyota Central R&D Labs.,Inc.

Control of Channel Mobility and Threshold Voltage in AlSiO/AlN/GaN MOSFETs

Gianmauro_Pozzovivo

Gianmauro Pozzovivo Infineon Technologies Austria AG

GaN @ Infineon: Power Technologies with High Performance and High Reliability

Rachel Oliver-min

Rachel Oliver Department of Materials Science and Metallurgy, Cambridge University

Microscopy of cubic nitrides for LEDs

Herbert Pairitsch

Herbert Pairitsch Infineon Technologies Austria AG

Power-GaN, the long path from materials science to innovative products

Jan Ruschel Ferdinand-Braun-Institut

Operation-induced degradation effects in UV LEDs

Ulrich Schwarz TU Chemnitz, Institute of Physics

Transition between quantum confinement and bulklike behavior in wide polar quantum wells

Keisuke Shinohara

Keisuke Shinohara Teledyne Scientific Company

GaN HEMT scaling for millimeter-wave applications

Mayank Shrivastava

Mayank Shrivastava IISC

Towards Ultra High Vt Gate Stacks for e-mode GaN HEMTs

Ulrich Steegmueller

Ulrich Steegmueller ams OSRAM

Game Changing semiconductor Technologies - From high-power to miniaturized and smart LEDs

Arno Stockman BelGaN

Dynamic phenomena in 650V E-mode GaN technology

Tim Wernicke Technische Universität Berlin, Institute of Solid State Physics

Growth, fabrication and analysis of deep UV LEDs

Han Wui Then Intel

Gate-Last 3D Monolithic Process Integration of GaN Transistor and Silicon CMOS for High Performance RF and Power Electronics

Enrico Zanoni University of Padua

Degradation of RF devices