GaN Marathon 2024

These Are

Our Keynote Speakers...

Hiroshi Amano

Nagoya University

The Role of Nitride Semiconductors in Connecting Science and Society

Professor Hiroshi Amano received Doctor of Engineering from Nagoya University. Currently he is a Director, Center for Integrated Research of Future Electronics, and a Professor, Institute of Materials and Systems for Sustainability, Nagoya University.

He shared the 2014 Nobel Prize in Physics with Prof. Isamu Akasaki and Prof. Shuji Nakamura “for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources”.

He is currently developing technologies for the fabrication of high-efficiency power semiconductor development and new energy-saving devices at Nagoya University.

Biography Collapse
BIOGRAPHY

Professor Hiroshi Amano received Doctor of Engineering from Nagoya University. Currently he is a Director, Center for Integrated Research of Future Electronics, and a Professor, Institute of Materials and Systems for Sustainability, Nagoya University.

He shared the 2014 Nobel Prize in Physics with Prof. Isamu Akasaki and Prof. Shuji Nakamura “for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources”.

He is currently developing technologies for the fabrication of high-efficiency power semiconductor development and new energy-saving devices at Nagoya University.

Aurelien David

Google

Coming Soon

Aurelien David received the Masters degree in quantum physics from Ecole Polytechnique, France, in 2003, and the Ph.D. degree in applied physics from Ecole Polytechnique, in collaboration with the University of California, Santa Barbara, CA, USA, in 2006.

From 2006 to 2010 he worked in the Advanced Laboratories at Philips Lumileds. He joined Soraa, Inc., Fremont, CA, USA, in 2010. His work is both theoretical and experimental; it focuses on semiconductor optics and physics, and aspects of III–Nitride LED’s efficiency. (Source: IEEE)

Biography Collapse
BIOGRAPHY

Aurelien David received the Masters degree in quantum physics from Ecole Polytechnique, France, in 2003, and the Ph.D. degree in applied physics from Ecole Polytechnique, in collaboration with the University of California, Santa Barbara, CA, USA, in 2006.,From 2006 to 2010 he worked in the Advanced Laboratories at Philips Lumileds. He joined Soraa, Inc., Fremont, CA, USA, in 2010. His work is both theoretical and experimental; it focuses on semiconductor optics and physics, and aspects of III–Nitride LED’s efficiency. (Source: IEEE)

Antony Sanders

Infineon Technologies Austria AG

Integrated GaN Partitioning: Challenges and Solutions

Anthony (Tony) Fraser Sanders is a Distinguished Engineer within the PSS Division of Infineon Technologies. Anthony is an IC Architecture responsible for over seeing PSS’s IC developments and defining Infineon’s next generation of IC Technologies.

Anthony earned a Bachelor Degree with Honors in Electrical and Electronic Engineering from the University of Nottingham in 1991 and joined Infineon Technologies, formerly Siemens HL, in 1996.

He authored 48 patents, written 18 papers and publications and contributed to two books across a wide range of design aspects from statistical analysis, high speed interfaces to power control. He chaired a number of JEDEC, OIF and IEEE Standards Groups and his current research focus on modelling of complex system and technologies.

Biography Collapse
BIOGRAPHY

Anthony (Tony) Fraser Sanders is a Distinguished Engineer within the PSS Division of Infineon Technologies. Anthony is an IC Architecture responsible for over seeing PSS’s IC developments and defining Infineon’s next generation of IC Technologies.

Anthony earned a Bachelor Degree with Honors in Electrical and Electronic Engineering from the University of Nottingham in 1991 and joined Infineon Technologies, formerly Siemens HL, in 1996.

He authored 48 patents, written 18 papers and publications and contributed to two books across a wide range of design aspects from statistical analysis, high speed interfaces to power control. He chaired a number of JEDEC, OIF and IEEE Standards Groups and his current research focus on modelling of complex system and technologies.

Hiroshi Amano

Nagoya University

The Role of Nitride Semiconductors in Connecting Science and Society

BIOGRAPHY

Professor Hiroshi Amano received Doctor of Engineering from Nagoya University. Currently he is a Director, Center for Integrated Research of Future Electronics, and a Professor, Institute of Materials and Systems for Sustainability, Nagoya University.

He shared the 2014 Nobel Prize in Physics with Prof. Isamu Akasaki and Prof. Shuji Nakamura “for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources”.

He is currently developing technologies for the fabrication of high-efficiency power semiconductor development and new energy-saving devices at Nagoya University.

Aurelien David

Google

Coming Soon

BIOGRAPHY

Aurelien David received the Masters degree in quantum physics from Ecole Polytechnique, France, in 2003, and the Ph.D. degree in applied physics from Ecole Polytechnique, in collaboration with the University of California, Santa Barbara, CA, USA, in 2006.,From 2006 to 2010 he worked in the Advanced Laboratories at Philips Lumileds. He joined Soraa, Inc., Fremont, CA, USA, in 2010. His work is both theoretical and experimental; it focuses on semiconductor optics and physics, and aspects of III–Nitride LED’s efficiency. (Source: IEEE)

Antony Sanders

Infineon Technologies Austria AG

Integrated GaN Partitioning: Challenges and Solutions

BIOGRAPHY

Anthony (Tony) Fraser Sanders is a Distinguished Engineer within the PSS Division of Infineon Technologies. Anthony is an IC Architecture responsible for over seeing PSS’s IC developments and defining Infineon’s next generation of IC Technologies.

Anthony earned a Bachelor Degree with Honors in Electrical and Electronic Engineering from the University of Nottingham in 1991 and joined Infineon Technologies, formerly Siemens HL, in 1996.

He authored 48 patents, written 18 papers and publications and contributed to two books across a wide range of design aspects from statistical analysis, high speed interfaces to power control. He chaired a number of JEDEC, OIF and IEEE Standards Groups and his current research focus on modelling of complex system and technologies.

...And Our Invited Speakers

Davide Bisi Transphorm Inc.
Latest Progress on GaN Cascode Devices for High-Power Applications
Michal Bockowski Institute of High Pressure Physics of the Polish Academy of Sciences
GaN-on-GaN technology from the point of view of materials science - challenges and difficulties
Srabanti Chowdhury Standford University
Coming Soon
Eduardo Marty Chumbes Raytheon Technologies
Millimeter-wave ScAlN RF Transistors – Status and Future Direction
Patrick Fay Department of Electrical Engineering, University of Notre Dame
Advances in Polarization Engineering for Power, Linearity, and Thermal Management
Karen Geens IMEC
Power device fabrication for extension to high voltages
Nicolas Grandjean Institute of Physics, School of Basic Sciences, EPFL
Efficiency of III-nitride quantum wells: the importance of point defects
Åsa Haglund Chalmers University of Technology
Coming Soon
Oliver Hilt Ferdinand-Braun-Institut
Coming Soon
Christian Huber Bosch
Is vertical GaN on foreign substrates feasible? Insights from the YESvGaN project
Ferdinando Iucolano STMicroelectronics
Coming Soon
Jose Jimenez Qorvo
20 lessons learnt on 20 years working in GaN-RF
Kozo Makiyama Sumitomo Electric Industries Ltd.
High-power-density N-polar MIS GaN HEMT for power amplifiers
Elison Matioli Institute of Electrical and Micro-Engineering, EPFL
New prospects of GaN electronics
Farid Medjdoub CNRS-IEMN
The next millimeter-wave breakthrough coming up with advanced GaN transistors
Jeong-Sun Moon HRL Laboratories
Millimeter-wave GaN technology: Challenges and Opportunities
Kalparupa Mukherjee Cambridge GaN Devices
Coming Soon
Tetsuo Narita Toyota Central R&D Labs.,Inc.
Control of Channel Mobility and Threshold Voltage in AlSiO/AlN/GaN MOSFETs
Gianmauro Pozzovivo Infineon Technologies Austria AG
GaN @ Infineon: Power Technologies with High Performance and High Reliability
Rachel Oliver Department of Materials Science and Metallurgy, Cambridge University
Microscopy of cubic nitrides for LEDs
Herbert Pairitsch Infineon Technologies Austria AG
Research for application specific integration of GaN Power Devices performed in ALL2GaN
Ruediger Quay Fraunhofer IAF - Inatech
Advances in mm-Wave Gallium Nitride HEMTS and MMICs: Gain and Efficiency
Jan Ruschel Ferdinand-Braun-Institut
Operation-induced degradation effects in UV LEDs
Ulrich Schwarz TU Chemnitz, Institute of Physics
Transition between quantum confinement and bulklike behavior in wide polar quantum wells
Keisuke Shinohara Teledyne Scientific Company
GaN HEMT scaling for millimeter-wave applications
Mayank Shrivastava IISC
Towards Ultra High Vt Gate Stacks for e-mode GaN HEMTs
Ulrich Steegmueller ams OSRAM
Game Changing semiconductor Technologies - From high-power to miniaturized and smart LEDs
Arno Stockman BelGaN
Dynamic phenomena in 650V E-mode GaN technology
Marnix Tack Gan Valley / BelGaN
GaN Valley (TM) : a powerful ecosystem driving innovation and scale-up of a GaN industry in Europe
Tim Wernicke Technische Universität Berlin, Institute of Solid State Physics
Growth, fabrication and analysis of deep UV LEDs
Han Wui Then Intel
Gate-Last 3D Monolithic Process Integration of GaN Transistor and Silicon CMOS for High Performance RF and Power Electronics
Enrico Zanoni University of Padua
Degradation of RF devices