GaN Marathon 2024

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The Accepted Abstracts

Dear participants to the poster session, down below you can find the disposition that will be used during the poster session at Dogana Veneta. Find your name and assigned code on the list and check where your poster will stand. Every poster code has the following format: PO.#

  • Adams Francesca

    University of Cambridge - UK
    Temperature-Dependent Dynamic On-Resistance of Normally-Off GaN High Electron Mobility Transistors
    PO.27

  • Andrzej Taube

    Łukasiewicz Research Network - Institute of Microelectronics and Photonics - Poland
    Optimization of two-zone step-etched junction termination structures for vertical GaN power devices
    PO.28

  • Bansal Amit

    Indian Institute of Science Bangalore - India
    Microwave power performance and trap analysis in buffer-free AlGaN/GaN-on-SiC MISHEMTs
    PO.25

  • Baratella Giulio

    Ghent University - Belgium
    Monolithic 650V dual-gate p-GaN bidirectional switch in GaN-IC technology
    PO.30

  • Barbar Ghassan

    Director Technology - Germany
    Low temperature starting layer for GaN-based devices
    PO.13

  • Bau Plinio

    Wise-integration - France
    Monolithic Integration of Circuits for 650V e-mode GaN HEMT
    PO.31

  • Becht Conny

    Technical University of Chemnitz - Germany
    Investigating lateral carrier diffusion in InGaN quantum wells grown by molecular beam epitaxy as function of quantum well width
    PO.10

  • Besendörfer Sven

    Fraunhofer IISB - Germany
    Qualification of GaN and AlN substrates and homoepitaxial layers by laboratory X-Ray Topography
    PO.11

  • Bo Liu

    Tsinghua University - China
    Size-Dependent Photoluminescence Wavelength-Shift in InGaN Micro-LEDs
    PO.05

  • Bohomolov Danyo

    Chemnitz University of Technology - Germany
    Optical and electrical noise in RGB LEDs
    PO.02

  • Boito Mirco

    Università degli Studi di Padova - Italy
    On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach
    PO.53

  • Buckley Julien

    Grenoble - France
    Low leakage and high breakdown voltage GaN-on-GaN Schottky diode by TMAH surface treatment.
    PO.32

  • Buffolo Matteo

    Università degli Studi di Padova - Italy
    Understanding UV-C LEDs degradation
    12B.2

  • Choi Hoi Wai

    University of Hong Kong - Hong Kong
    Thin Film InGaN Microdisk Laser on Metallic Pivot
    PO.04

  • Cioni Marcello

    STMicroelectronics - Italy
    Influence of Substrate connection on dynamic-RON drift of 650V packaged GaN HEMTs
    PO.33

  • Cordier Yvon

    Univ. Côte d'Azur, CNRS, CRHEA - France
    Evaluation of ScAlN/GaN HEMTs grown by ammonia source molecular beam epitaxy
    11C.3

  • Cros Ana

    Institute of Materials Science, University of Valencia - Spain
    Characterization of Mg implanted GaN layers by Raman scattering and light assisted KPFM
    PO.12

  • De Pieri Francesco

    Università degli Studi di Padova - Italy

    PO.57

  • De Santi Carlo

    Università degli Studi di Padova - Italy
    p-GaN gate reliability physics
    12A.5

  • Diehle Patrick

    Fraunhofer Institute for Microstructure of Materials and Systems IMWS - Germany
    Doping investigation of structured GaN devices by highly lateral resolved TOF-SIMS
    10D.8

  • El Amrani Mohammed

    Univ. Grenoble Alpes, CEA, Leti - France
    Study of the Leakage Current Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy
    PO.34

  • Ercolano Franco

    University of Bologna - Italy
    TCAD analysis of the High-Temperature Reverse-Bias Stress on AlGaN/GaN HEMTs
    10C.4

  • Favero Davide

    Università degli Studi di Padova - Italy
    Vth stability and gate leakage current trade-off in p-GaN gate power HEMTs during on- and off-state stress
    PO.35

  • Ferrandis Philippe

    CNRS Institut NEEL - France
    Potential of AlxGa1-xN/AlyGa1-yN high electron mobility transistors on Si for power electronics
    PO.36

  • Fischer Sandra

    Materials Center Leoben Forschung GmbH - Austria
    Locally resolved thermal investigation of vertical GaN devices
    PO.37

  • Fregolent Manuel

    Università degli Studi di Padova - Italy
    Investigation of Threshold Voltage Instability in GaN-on-Si Trench MOSFETs with SiO2 Gate Dielectric
    PO.52

  • Garbe Valentin

    TU Bergakademie Freiberg - Germany
    Formation mechanism of V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs
    PO.14

  • García-Sánchez Sergio

    Universidad de Salamanca - Spain
    Analysis of Gunn Oscillations in Doped GaN Planar Diodes through Monte Carlo Simulations
    PO.26

  • Goller Maximilian

    Chemnitz University of Technologies - Germany
    Controllability of GaN Gate Injection Transistors in Hard - Switching Operation
    PO.38

  • Goncalez Filho Walter

    IMEC - Belgium
    Leakage Conduction Mechanisms in AlON dielectric deposited on GaN
    PO.15

  • Gowrisankar Aniruddhan

    Indian Institute of Science - India
    Engineering a Low RF Loss HEMT-on-Silicon
    10C.6

  • Grasset Nicolas

    Soft-Switching Dynamic Rdson Deployment on ATE Mimicking Hard-Switching
    PO.29

  • Greco Giuseppe

    CNR-IMM (Catania, Italy) - Italy
    Transport mechanisms in “Au free” contacts for AlGaN/GaN HEMTs
    PO.39

  • Guérin Corentin

    NPSC/CEA - France
    Use of a patterned AlN/GaN nanowires to realize a 248nm ligth-emitting diode
    PO.03

  • Hamdaoui Youssef

    CNRS-IEMN - France
    High quality fully versus pseudo vertical GaN-on-Silicon pn diodes
    11A.1

  • Hein Lukas

    Chemnitz University of Technology - Germany
    Investigation on High Temperature Behaviour of p-GaN HEMTs by Different Temperature Sensitive Electrical Parameters
    PO.40

  • Henriques Jonathan

    CEA - France
    Growth of organized GaN µ-platelets on Graphene/SiO2 by MOVPE
    PO.16

  • Heuken Lars

    Porsche - Germany
    Elevating Electric Sports Cars: GaN Power Semiconductors Unleashed
    10D.6

  • Ignoumba-Ignoumba Ndembi

    INSA Lyon - France
    Carrier density analysis in stressed n-doped GaN layers on sapphire
    PO.17

  • Kaltsounis Thomas

    CEA - Leti - France
    505 V BV quasi-vertical p-n diode by localized epitaxial growth of GaN on Si (111)
    PO.41

  • Kamiński Maciej

    Łukasiewicz Research Network - Institute of Microelectronics and Photonics - Poland
    Investigation of the Off-current Mechanism in Vertical GaN Trench-MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates
    PO.42

  • Kim Minho

    Linköping University - Sweden
    GaN HEMT structures on AlN substrates: mastering fully coalesced thin GaN by hot-wall MOCVD
    PO.18

  • Kuzmik Jan

    Slovak Academy of Sciences - Slovakia
    InN/InAlN Heterostructures for New Generation of Fast Electronics
    11B.1

  • Lähnemann Jonas

    Paul-Drude-Institut - Germany
    High-resolution cathodoluminescence spectroscopy of the excitonic emission of homoepitaxial AlN
    PO.19

  • Lerner Ralf

    X-FAB Global Service GmbH - Germany
    Towards a Vertical Membrane GaN MOSFET Process on 200 mm GaN-on-Silicon wafers: Challenges and Solutions
    PO.43

  • Lin Yingying

    Nagoya University - Japan
    Anisotropic hole transport along [0001] and [11-20] direction in p-doped (10-10) GaN
    11B.5

  • Lu Shun

    Nagoya University - Japan
    Recess-etching-free GaN p-MOSFET achieved by p-type contact to GaN/AlGaN heterojunction with Mg-annealing process
    10D.3

  • M'Qaddem Zakariae

    CEA, LETI - France
    Cathodoluminescence mapping of Si doping in localized epitaxial GaN layers on Si wafers
    PO.20

  • Malik Rasik Rashid

    Indian Institute of Science (IISc), Bangalore - India
    Positive Gate Over-Drive Induced Hole Trap Generation and its Influence on VTH and Gate Leakage Instability in p-GaN Gate Stack of AlGaN/GaN HEMTs
    PO.44

  • Marcinkevicius Saulius

    KTH Royal Institute of Technology - Sweden
    Hole Injection into Quantum Wells of Long Wavelength GaN LEDs
    12B.5

  • Martin Horcajo Sara

    Nexperia - Germany
    Robust GaN technologies to address a wide range of applications
    PO.46

  • Meissner Elke

    Fraunhofer Institute for Integrated Systems and Device Technology IISB - Germany
    Growth of thick freestanding 3-inch GaN crystals by vertical down-flow HVPE
    11B.3

  • Meneghesso Gaudenzio

    Università degli Studi di Padova - Italy
    The GaN4AP projects: results and challenges
    11B.7

  • Michler Sondre

    Siltronic AG - Germany
    Epitaxy of thick GaN drift layers on Si (111) for vertical power devices
    PO.21

  • Moser Matthias

    Institut für Mikroelektronik Stuttgart - Germany
    Low-Power AlGaN/GaN Pressure Sensors with High Sensitivity
    PO.45

  • Nicoletto Marco

    Università degli Studi di Padova - Italy
    High Periodicity MQWs GaN-Based Solar Cells: Insights V-Pits and Trench-Like Defects Electro-Optical Properties
    PO.09

  • Ortiga-Fibla Jesús

    Institute of Materials Science (University of València) - Spain
    UV light assisted Kelvin probe force microscopy analysis of dislocations in GaN structures for power devices
    PO.22

  • Paskov Plamen

    Linkoping University - Sweden
    Thermal conductivity of GaN: Effects of dislocations, doping, layer thickness, and crystal anisotropy
    PO.23

  • Piva Francesco

    Università degli Studi di Padova - Italy
    Ageing effects on optical power characteristics and defects in SQW UV-C LEDs
    PO.01

  • Quach Anh

    University of Grenoble Alpes - France
    Non-radiative recombination centers in InGaN/GaN nanowires heterostructure studied by statistical analysis using Cathodoluminescence and Scanning Transmission Electron Microscopy
    PO.24

  • Rennesson Stephanie

    EasyGaN SAS - France
    MBE grown AlN/GaN HEMTs on 200 mm Silicon substrate for mm-Waves: From epitaxial growth to first reliability tests
    PO.54

  • Roccato Nicola

    Università degli Studi di Padova - Italy
    Modeling the degradation mechanisms of UV-C LEDs
    PO.06

  • Rueß Manuel

    University of Stuttgart, Institute of Robust Power Semiconductor Systems (ILH) - Germany
    GaN Half-Bridges on Electrical and Thermal Co-Designed PCB-on-Ceramic Substrates
    PO.47

  • Sadowski Oskar

    Lukasiewicz Research Network - Institute of Microelectronics and Photonics - Poland
    Electrical and structural investigation of low resistivity Ti/Al/TiN/Au ohmic contacts to Ga- and N-face n-GaN for vertical power devices
    PO.48

  • Sáenz de Santa María Modroño Pablo

    Institut Néel CNRS/UGA - France
    Investigation of external quantum efficiency variation in InGaN/GaN micro-LEDs by time-correlated cathodoluminescence spectroscopy
    PO.07

  • Saro Marco

    Università degli Studi di Padova - Italy

    PO.56

  • Schimmel Saskia

    FAU Erlangen-Nürnberg - Germany
    Transition from etch-back to growth conditions during ammonothermal growth of GaN – a transient numerical model for convective flow and temperature distribution in a retrograde solubility configuration
    PO.58

  • Schmult Stefan

    TU Dresden - Germany
    Systematic suppression of parasitic conductivity in lateral GaN/AlGaN devices
    PO.55

  • Siviero Matilde

    CNRS - CRHEA - France
    First linear array of GaN diodes for high energy proton beam imaging
    PO.08

  • Stoklas Roman

    Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava - Slovakia
    Vertical GaN MOS transistor with semi-insulating channel
    PO.49

  • Uhlig Lukas

    Chemnitz University of Technology - Germany
    Fast lateral mode competition phenomena in InGaN broad-ridge laser diodes
    12B.3

  • Weber Benjamin

    IAF - Germany
    Parylene: A novel organic low-k final passivation for 100 nm GaN HEMTs
    PO.50

  • Weisbuch Claude

    University of California, Santa Barbara - USA
    What we learned from photo and electro emission experiments in III-nitrides
    12B.1

  • Witzigmann Bernd

    Friedrich-Alexander Universität Erlangen-Nürnberg (FAU) - Germany
    Impact of alloy fluctuations on optical gain in AlGaN based UV lasers
    12B.7

  • Yazdani Hossein

    Ferdinand-Braun Institute - Germany
    Si-implantation for Low Ohmic Contact Resistances in RF GaN HEMTs
    11C.6

  • Zagni Nicolò

    University of Modena and Reggio Emilia - Italy
    Insights from Device Simulations into Trapping Effects in Vertical GaN Power Devices
    11A.3

  • Zhao Yuji

    Rice University - USA
    selective area regrowth and doping of GaN, diamond and BN for power devices

  • Zou Xinbo

    ShanghaiTech University - China, People's Republic of
    Dynamic Characteristics of E-mode Recessed-gate GaN MOSHEMT by Ion Beam Etching
    PO.51