GaN Marathon 2024

Here Are...

The Accepted Abstracts


Congratulations and thank you for the original and interesting submissions! 

  • Adams Francesca

    University of Cambridge - UK
    Temperature-Dependent Dynamic On-Resistance of Normally-Off GaN High Electron Mobility Transistors

  • Andrzej Taube

    Łukasiewicz Research Network - Institute of Microelectronics and Photonics - Poland
    Optimization of two-zone step-etched junction termination structures for vertical GaN power devices

  • Bansal Amit

    Indian Institute of Science Bangalore - India
    Microwave power performance and trap analysis in buffer-free AlGaN/GaN-on-SiC MISHEMTs

  • Baratella Giulio

    Ghent University - Belgium
    Monolithic 650V dual-gate p-GaN bidirectional switch in GaN-IC technology

  • Bau Plinio

    Wise-integration - France
    Monolithic Integration of Circuits for 650V e-mode GaN HEMT

  • Becht Conny

    Technical University of Chemnitz - Germany
    Investigating lateral carrier diffusion in InGaN quantum wells grown by molecular beam epitaxy as function of quantum well width

  • Besendörfer Sven

    Fraunhofer IISB - Germany
    Qualification of GaN and AlN substrates and homoepitaxial layers by laboratory X-Ray Topography

  • Bohomolov Danyo

    Chemnitz University of Technology - Germany
    Optical and electrical noise in RGB LEDs

  • Boito Mirco

    Università degli Studi di Padova - Italy
    On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach

  • Buckley Julien

    Grenoble - France
    Low leakage and high breakdown voltage GaN-on-GaN Schottky diode by TMAH surface treatment.

  • Cioni Marcello

    STMicroelectronics - Italy
    Influence of Substrate connection on dynamic-RON drift of 650V packaged GaN HEMTs

  • Cordier Yvon

    Univ. Côte d'Azur, CNRS, CRHEA - France
    Evaluation of ScAlN/GaN HEMTs grown by ammonia source molecular beam epitaxy

  • Cros Ana

    Institute of Materials Science, University of Valencia - Spain
    Characterization of Mg implanted GaN layers by Raman scattering and light assisted KPFM

  • Diehle Patrick

    Fraunhofer Institute for Microstructure of Materials and Systems IMWS - Germany
    Doping investigation of structured GaN devices by highly lateral resolved TOF-SIMS

  • Dikme Yilmaz

    Director Technology - Germany
    Low temperature starting layer for GaN-based devices

  • El Amrani Mohammed

    Univ. Grenoble Alpes, CEA, Leti - France
    Study of the Leakage Current Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

  • Ercolano Franco

    University of Bologna - Italy
    TCAD analysis of the High-Temperature Reverse-Bias Stress on AlGaN/GaN HEMTs

  • Favero Davide

    Università degli Studi di Padova - Italy
    Vth stability and gate leakage current trade-off in p-GaN gate power HEMTs during on- and off-state stress

  • Ferrandis Philippe

    CNRS Institut NEEL - France
    Potential of AlxGa1-xN/AlyGa1-yN high electron mobility transistors on Si for power electronics

  • Fischer Sandra

    Materials Center Leoben Forschung GmbH - Austria
    Locally resolved thermal investigation of vertical GaN devices

  • Fregolent Manuel

    Università degli Studi di Padova - Italy
    Investigation of Threshold Voltage Instability in GaN-on-Si Trench MOSFETs with SiO2 Gate Dielectric

  • Garbe Valentin

    TU Bergakademie Freiberg - Germany
    Formation mechanism of V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs

  • García-Sánchez Sergio

    Universidad de Salamanca - Spain
    Analysis of Gunn Oscillations in Doped GaN Planar Diodes through Monte Carlo Simulations

  • Goller Maximilian

    Chemnitz University of Technologies - Germany
    Controllability of GaN Gate Injection Transistors in Hard - Switching Operation

  • Goncalez Filho Walter

    IMEC - Belgium
    Leakage Conduction Mechanisms in AlON dielectric deposited on GaN

  • Gowrisankar Aniruddhan

    Indian Institute of Science - India
    Engineering a Low RF Loss HEMT-on-Silicon

  • Grasset Nicolas

    STMicroelectronics - France
    Soft-Switching Dynamic Rdson Deployment on ATE Mimicking Hard-Switching

  • Greco Giuseppe

    CNR-IMM (Catania, Italy) - Italy
    Transport mechanisms in “Au free” contacts for AlGaN/GaN HEMTs

  • Guérin Corentin

    NPSC/CEA - France
    Use of a patterned AlN/GaN nanowires to realize a 248nm ligth-emitting diode

  • Hamdaoui Youssef

    CNRS-IEMN - France
    High quality fully versus pseudo vertical GaN-on-Silicon pn diodes

  • Hein Lukas

    Chemnitz University of Technology - Germany
    Investigation on High Temperature Behaviour of p-GaN HEMTs by Different Temperature Sensitive Electrical Parameters

  • Henriques Jonathan

    CEA - France
    Growth of organized GaN µ-platelets on Graphene/SiO2 by MOVPE

  • Heuken Lars

    Porsche - Germany
    Elevating Electric Sports Cars: GaN Power Semiconductors Unleashed

  • Hoi Wai Choi

    University of Hong Kong - Hong Kong
    Thin Film InGaN Microdisk Laser on Metallic Pivot

  • Ignoumba-Ignoumba Ndembi

    INSA Lyon - France
    Carrier density analysis in stressed n-doped GaN layers on sapphire

  • Kaltsounis Thomas

    CEA - Leti - France
    505 V BV quasi-vertical p-n diode by localized epitaxial growth of GaN on Si (111)

  • Kamiński Maciej

    Łukasiewicz Research Network - Institute of Microelectronics and Photonics - Poland
    Investigation of the Off-current Mechanism in Vertical GaN Trench-MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates

  • Kim Minho

    Linköping University - Sweden
    GaN HEMT structures on AlN substrates: mastering fully coalesced thin GaN by hot-wall MOCVD

  • Kuzmik Jan

    Slovak Academy of Sciences - Slovakia
    InN/InAlN Heterostructures for New Generation of Fast Electronics

  • Lähnemann Jonas

    Paul-Drude-Institut - Germany
    High-resolution cathodoluminescence spectroscopy of the excitonic emission of homoepitaxial AlN

  • Lerner Ralf

    X-FAB Global Service GmbH - Germany
    Towards a Vertical Membrane GaN MOSFET Process on 200 mm GaN-on-Silicon wafers: Challenges and Solutions

  • Lin Yingying

    Nagoya University - Japan
    Anisotropic hole transport along [0001] and [11-20] direction in p-doped (10-10) GaN

  • Liu Bo

    Tsinghua University - China
    Size-Dependent Photoluminescence Wavelength-Shift in InGaN Micro-LEDs

  • Lu Shun

    Nagoya University - Japan
    Recess-etching-free GaN p-MOSFET achieved by p-type contact to GaN/AlGaN heterojunction with Mg-annealing process

  • M'Qaddem Zakariae

    CEA, LETI - France
    Cathodoluminescence mapping of Si doping in localized epitaxial GaN layers on Si wafers

  • Malik Rasik Rashid

    Indian Institute of Science (IISc), Bangalore - India
    Positive Gate Over-Drive Induced Hole Trap Generation and its Influence on VTH and Gate Leakage Instability in p-GaN Gate Stack of AlGaN/GaN HEMTs

  • Marcinkevicius Saulius

    KTH Royal Institute of Technology - Sweden
    Hole Injection into Quantum Wells of Long Wavelength GaN LEDs

  • Meissner Elke

    Fraunhofer Institute for Integrated Systems and Device Technology IISB - Germany
    Growth of thick freestanding 3-inch GaN crystals by vertical down-flow HVPE

  • Meyer Dominik

    AIXTRON SE - Germany
    300 mm MOCVD Reactor Technology for Vertical GaN-on-Si Power Devices

  • Michler Sondre

    Siltronic AG - Germany
    Epitaxy of thick GaN drift layers on Si (111) for vertical power devices

  • Moser Matthias

    Institut für Mikroelektronik Stuttgart - Germany
    Threshold-Voltage-Engineering using Nanohole Gate AlGaN/GaN MISHEMT Devices

  • Moser Matthias

    Institut für Mikroelektronik Stuttgart - Germany
    Low-Power AlGaN/GaN Pressure Sensors with High Sensitivity

  • Nicoletto Marco

    Università degli Studi di Padova - Italy
    High Periodicity MQWs GaN-Based Solar Cells: Insights V-Pits and Trench-Like Defects Electro-Optical Properties

  • Ortiga-Fibla Jesús

    Institute of Materials Science (University of València) - Spain
    UV light assisted Kelvin probe force microscopy analysis of dislocations in GaN structures for power devices

  • Pagnano Dario

    Nexperia - Germany
    Robust GaN technologies to address a wide range of applications

  • Piva Francesco

    Università degli Studi di Padova - Italy
    Ageing effects on optical power characteristics and defects in SQW UV-C LEDs

  • Plamen Paskov

    Linkoping University - Sweden
    Thermal conductivity of GaN: Effects of dislocations, doping, layer thickness, and crystal anisotropy

  • Quach Anh

    University of Grenoble Alpes - France
    Non-radiative recombination centers in InGaN/GaN nanowires heterostructure studied by statistical analysis using Cathodoluminescence and Scanning Transmission Electron Microscopy

  • Rennesson Stephanie

    EasyGaN SAS - France
    MBE grown AlN/GaN HEMTs on 200 mm Silicon substrate for mm-Waves: From epitaxial growth to first reliability tests

  • Roccato Nicola

    Università degli Studi di Padova - Italy
    Modeling the degradation mechanisms of UV-C LEDs

  • Rueß Manuel

    University of Stuttgart, Institute of Robust Power Semiconductor Systems (ILH) - Germany
    GaN Half-Bridges on Electrical and Thermal Co-Designed PCB-on-Ceramic Substrates

  • Sadowski Oskar

    Lukasiewicz Research Network - Institute of Microelectronics and Photonics - Poland
    Electrical and structural investigation of low resistivity Ti/Al/TiN/Au ohmic contacts to Ga- and N-face n-GaN for vertical power devices

  • Sáenz de Santa María Modroño Pablo

    Institut Néel CNRS/UGA - France
    Investigation of external quantum efficiency variation in InGaN/GaN micro-LEDs by time-correlated cathodoluminescence spectroscopy

  • Schimmel Saskia

    FAU Erlangen-Nürnberg - Germany
    Transition from etch-back to growth conditions during ammonothermal growth of GaN – a transient numerical model for convective flow and temperature distribution in a retrograde solubility configuration

  • Schmult Stefan

    TU Dresden - Germany
    Systematic suppression of parasitic conductivity in lateral GaN/AlGaN devices

  • Siviero Matilde

    CNRS - CRHEA - France
    First linear array of GaN diodes for high energy proton beam imaging

  • Stoklas Roman

    Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava - Slovakia
    Vertical GaN MOS transistor with semi-insulating channel

  • Uhlig Lukas

    Chemnitz University of Technology - Germany
    Fast lateral mode competition phenomena in InGaN broad-ridge laser diodes

  • Weber Benjamin

    IAF - Germany
    Parylene: A novel organic low-k final passivation for 100 nm GaN HEMTs

  • Weisbuch Claude

    University of California, Santa Barbara - USA
    What we learned from photo and electro emission experiments in III-nitrides

  • Witzigmann Bernd

    Friedrich-Alexander Universität Erlangen-Nürnberg (FAU) - Germany
    Impact of alloy fluctuations on optical gain in AlGaN based UV lasers

  • Yazdani Hossein

    Ferdinand-Braun Institute - Germany
    Si-implantation for Low Ohmic Contact Resistances in RF GaN HEMTs

  • Zagni Nicolò

    University of Modena and Reggio Emilia - Italy
    Insights from Device Simulations into Trapping Effects in Vertical GaN Power Devices

  • Zhang Yu

    ShanghaiTech University - China, People's Republic of
    Dynamic Characteristics of E-mode Recessed-gate GaN MOSHEMT by Ion Beam Etching