Here Are...
The Accepted Abstracts
Congratulations and thank you for the original and interesting submissions!
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Adams Francesca
University of Cambridge - UK
Temperature-Dependent Dynamic On-Resistance of Normally-Off GaN High Electron Mobility Transistors -
Andrzej Taube
Łukasiewicz Research Network - Institute of Microelectronics and Photonics - Poland
Optimization of two-zone step-etched junction termination structures for vertical GaN power devices -
Bansal Amit
Indian Institute of Science Bangalore - India
Microwave power performance and trap analysis in buffer-free AlGaN/GaN-on-SiC MISHEMTs -
Baratella Giulio
Ghent University - Belgium
Monolithic 650V dual-gate p-GaN bidirectional switch in GaN-IC technology -
Bau Plinio
Wise-integration - France
Monolithic Integration of Circuits for 650V e-mode GaN HEMT -
Becht Conny
Technical University of Chemnitz - Germany
Investigating lateral carrier diffusion in InGaN quantum wells grown by molecular beam epitaxy as function of quantum well width -
Besendörfer Sven
Fraunhofer IISB - Germany
Qualification of GaN and AlN substrates and homoepitaxial layers by laboratory X-Ray Topography -
Bohomolov Danyo
Chemnitz University of Technology - Germany
Optical and electrical noise in RGB LEDs -
Boito Mirco
Università degli Studi di Padova - Italy
On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach -
Buckley Julien
Grenoble - France
Low leakage and high breakdown voltage GaN-on-GaN Schottky diode by TMAH surface treatment. -
Cioni Marcello
STMicroelectronics - Italy
Influence of Substrate connection on dynamic-RON drift of 650V packaged GaN HEMTs -
Cordier Yvon
Univ. Côte d'Azur, CNRS, CRHEA - France
Evaluation of ScAlN/GaN HEMTs grown by ammonia source molecular beam epitaxy -
Cros Ana
Institute of Materials Science, University of Valencia - Spain
Characterization of Mg implanted GaN layers by Raman scattering and light assisted KPFM -
Diehle Patrick
Fraunhofer Institute for Microstructure of Materials and Systems IMWS - Germany
Doping investigation of structured GaN devices by highly lateral resolved TOF-SIMS -
Dikme Yilmaz
Director Technology - Germany
Low temperature starting layer for GaN-based devices -
El Amrani Mohammed
Univ. Grenoble Alpes, CEA, Leti - France
Study of the Leakage Current Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy -
Ercolano Franco
University of Bologna - Italy
TCAD analysis of the High-Temperature Reverse-Bias Stress on AlGaN/GaN HEMTs -
Favero Davide
Università degli Studi di Padova - Italy
Vth stability and gate leakage current trade-off in p-GaN gate power HEMTs during on- and off-state stress -
Ferrandis Philippe
CNRS Institut NEEL - France
Potential of AlxGa1-xN/AlyGa1-yN high electron mobility transistors on Si for power electronics -
Fischer Sandra
Materials Center Leoben Forschung GmbH - Austria
Locally resolved thermal investigation of vertical GaN devices -
Fregolent Manuel
Università degli Studi di Padova - Italy
Investigation of Threshold Voltage Instability in GaN-on-Si Trench MOSFETs with SiO2 Gate Dielectric -
Garbe Valentin
TU Bergakademie Freiberg - Germany
Formation mechanism of V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs -
García-Sánchez Sergio
Universidad de Salamanca - Spain
Analysis of Gunn Oscillations in Doped GaN Planar Diodes through Monte Carlo Simulations -
Goller Maximilian
Chemnitz University of Technologies - Germany
Controllability of GaN Gate Injection Transistors in Hard - Switching Operation -
Goncalez Filho Walter
IMEC - Belgium
Leakage Conduction Mechanisms in AlON dielectric deposited on GaN -
Gowrisankar Aniruddhan
Indian Institute of Science - India
Engineering a Low RF Loss HEMT-on-Silicon -
Grasset Nicolas
STMicroelectronics - France
Soft-Switching Dynamic Rdson Deployment on ATE Mimicking Hard-Switching -
Greco Giuseppe
CNR-IMM (Catania, Italy) - Italy
Transport mechanisms in “Au free” contacts for AlGaN/GaN HEMTs -
Guérin Corentin
NPSC/CEA - France
Use of a patterned AlN/GaN nanowires to realize a 248nm ligth-emitting diode -
Hamdaoui Youssef
CNRS-IEMN - France
High quality fully versus pseudo vertical GaN-on-Silicon pn diodes -
Hein Lukas
Chemnitz University of Technology - Germany
Investigation on High Temperature Behaviour of p-GaN HEMTs by Different Temperature Sensitive Electrical Parameters -
Henriques Jonathan
CEA - France
Growth of organized GaN µ-platelets on Graphene/SiO2 by MOVPE -
Heuken Lars
Porsche - Germany
Elevating Electric Sports Cars: GaN Power Semiconductors Unleashed -
Hoi Wai Choi
University of Hong Kong - Hong Kong
Thin Film InGaN Microdisk Laser on Metallic Pivot -
Ignoumba-Ignoumba Ndembi
INSA Lyon - France
Carrier density analysis in stressed n-doped GaN layers on sapphire -
Kaltsounis Thomas
CEA - Leti - France
505 V BV quasi-vertical p-n diode by localized epitaxial growth of GaN on Si (111) -
Kamiński Maciej
Łukasiewicz Research Network - Institute of Microelectronics and Photonics - Poland
Investigation of the Off-current Mechanism in Vertical GaN Trench-MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates -
Kim Minho
Linköping University - Sweden
GaN HEMT structures on AlN substrates: mastering fully coalesced thin GaN by hot-wall MOCVD -
Kuzmik Jan
Slovak Academy of Sciences - Slovakia
InN/InAlN Heterostructures for New Generation of Fast Electronics -
Lähnemann Jonas
Paul-Drude-Institut - Germany
High-resolution cathodoluminescence spectroscopy of the excitonic emission of homoepitaxial AlN -
Lerner Ralf
X-FAB Global Service GmbH - Germany
Towards a Vertical Membrane GaN MOSFET Process on 200 mm GaN-on-Silicon wafers: Challenges and Solutions -
Lin Yingying
Nagoya University - Japan
Anisotropic hole transport along [0001] and [11-20] direction in p-doped (10-10) GaN -
Liu Bo
Tsinghua University - China
Size-Dependent Photoluminescence Wavelength-Shift in InGaN Micro-LEDs -
Lu Shun
Nagoya University - Japan
Recess-etching-free GaN p-MOSFET achieved by p-type contact to GaN/AlGaN heterojunction with Mg-annealing process -
M'Qaddem Zakariae
CEA, LETI - France
Cathodoluminescence mapping of Si doping in localized epitaxial GaN layers on Si wafers -
Malik Rasik Rashid
Indian Institute of Science (IISc), Bangalore - India
Positive Gate Over-Drive Induced Hole Trap Generation and its Influence on VTH and Gate Leakage Instability in p-GaN Gate Stack of AlGaN/GaN HEMTs -
Marcinkevicius Saulius
KTH Royal Institute of Technology - Sweden
Hole Injection into Quantum Wells of Long Wavelength GaN LEDs -
Meissner Elke
Fraunhofer Institute for Integrated Systems and Device Technology IISB - Germany
Growth of thick freestanding 3-inch GaN crystals by vertical down-flow HVPE -
Meyer Dominik
AIXTRON SE - Germany
300 mm MOCVD Reactor Technology for Vertical GaN-on-Si Power Devices -
Michler Sondre
Siltronic AG - Germany
Epitaxy of thick GaN drift layers on Si (111) for vertical power devices -
Moser Matthias
Institut für Mikroelektronik Stuttgart - Germany
Threshold-Voltage-Engineering using Nanohole Gate AlGaN/GaN MISHEMT Devices -
Moser Matthias
Institut für Mikroelektronik Stuttgart - Germany
Low-Power AlGaN/GaN Pressure Sensors with High Sensitivity -
Nicoletto Marco
Università degli Studi di Padova - Italy
High Periodicity MQWs GaN-Based Solar Cells: Insights V-Pits and Trench-Like Defects Electro-Optical Properties -
Ortiga-Fibla Jesús
Institute of Materials Science (University of València) - Spain
UV light assisted Kelvin probe force microscopy analysis of dislocations in GaN structures for power devices -
Pagnano Dario
Nexperia - Germany
Robust GaN technologies to address a wide range of applications -
Piva Francesco
Università degli Studi di Padova - Italy
Ageing effects on optical power characteristics and defects in SQW UV-C LEDs -
Plamen Paskov
Linkoping University - Sweden
Thermal conductivity of GaN: Effects of dislocations, doping, layer thickness, and crystal anisotropy -
Quach Anh
University of Grenoble Alpes - France
Non-radiative recombination centers in InGaN/GaN nanowires heterostructure studied by statistical analysis using Cathodoluminescence and Scanning Transmission Electron Microscopy -
Rennesson Stephanie
EasyGaN SAS - France
MBE grown AlN/GaN HEMTs on 200 mm Silicon substrate for mm-Waves: From epitaxial growth to first reliability tests -
Roccato Nicola
Università degli Studi di Padova - Italy
Modeling the degradation mechanisms of UV-C LEDs -
Rueß Manuel
University of Stuttgart, Institute of Robust Power Semiconductor Systems (ILH) - Germany
GaN Half-Bridges on Electrical and Thermal Co-Designed PCB-on-Ceramic Substrates -
Sadowski Oskar
Lukasiewicz Research Network - Institute of Microelectronics and Photonics - Poland
Electrical and structural investigation of low resistivity Ti/Al/TiN/Au ohmic contacts to Ga- and N-face n-GaN for vertical power devices -
Sáenz de Santa María Modroño Pablo
Institut Néel CNRS/UGA - France
Investigation of external quantum efficiency variation in InGaN/GaN micro-LEDs by time-correlated cathodoluminescence spectroscopy -
Schimmel Saskia
FAU Erlangen-Nürnberg - Germany
Transition from etch-back to growth conditions during ammonothermal growth of GaN – a transient numerical model for convective flow and temperature distribution in a retrograde solubility configuration -
Schmult Stefan
TU Dresden - Germany
Systematic suppression of parasitic conductivity in lateral GaN/AlGaN devices -
Siviero Matilde
CNRS - CRHEA - France
First linear array of GaN diodes for high energy proton beam imaging -
Stoklas Roman
Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava - Slovakia
Vertical GaN MOS transistor with semi-insulating channel -
Uhlig Lukas
Chemnitz University of Technology - Germany
Fast lateral mode competition phenomena in InGaN broad-ridge laser diodes -
Weber Benjamin
IAF - Germany
Parylene: A novel organic low-k final passivation for 100 nm GaN HEMTs -
Weisbuch Claude
University of California, Santa Barbara - USA
What we learned from photo and electro emission experiments in III-nitrides -
Witzigmann Bernd
Friedrich-Alexander Universität Erlangen-Nürnberg (FAU) - Germany
Impact of alloy fluctuations on optical gain in AlGaN based UV lasers -
Yazdani Hossein
Ferdinand-Braun Institute - Germany
Si-implantation for Low Ohmic Contact Resistances in RF GaN HEMTs -
Zagni Nicolò
University of Modena and Reggio Emilia - Italy
Insights from Device Simulations into Trapping Effects in Vertical GaN Power Devices -
Zhang Yu
ShanghaiTech University - China, People's Republic of
Dynamic Characteristics of E-mode Recessed-gate GaN MOSHEMT by Ion Beam Etching